IXGH32N60CD1 IXYS, IXGH32N60CD1 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH32N60CD1
Manufacturer Part Number
IXGH32N60CD1
Description
IGBT W/DIODE 600V 60A TO-247AD
Specifications of IXGH32N60CD1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 32A
Current - Collector (ic) (max)
60A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
32
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
55
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.85
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
32
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Part Number:
IXGH32N60CD1
HiPerFAST
with Diode
Light Speed Series
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
CM
GES
C25
C90
CES
JM
GEM
J
stg
GE(th)
CE(sat)
CES
CGR
GES
C
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ 0.8 V
T
Mounting torque, TO-247 AD
TO-247 AD
TO-268
C
C
C
C
C
C
C
CE
GE
CE
J
J
GE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
TM
, V
GE
GE
VJ
CES
IGBT
= 15 V
= 20 V
= 125 C, R
GE
CE
= 0 V
= V
GE
GE
= 1 M
G
= 10
T
T
(T
J
J
J
= 25 C
= 125 C
= 25 C, unless otherwise specified)
CES
IXGH 32N60CD1
IXGT 32N60CD1
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
I
CM
typ.
2.1
600
600
= 64
120
200
150
300
20
30
60
32
6
5
max.
200
100
5.0
2.5
Nm/lb.in.
3
mA
nA
W
C
C
C
C
A
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-247 AD (IXGH)
G = Gate
E = Emitter
Features
Applications
Advantages
frequency applications
TO-268 (D3) ( IXGT)
International standard TO-247AD
package
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speeds for high
High power surface mountable package
V
I
V
t
C25
fi(typ)
CES
CE(SAT)typ
G
C
G
E
E
C = Collector
= 600 V
= 60 A
= 2.1 V
= 55 ns
97544E (6/02)
TM
process
C (TAB)
C (TAB)
Related parts for IXGH32N60CD1
IXGH32N60CD1 Summary of contents
... 250 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGH 32N60CD1 IXGT 32N60CD1 Maximum Ratings 600 = 1 M 600 120 = CES 200 -55 ... +150 150 -55 ... +150 300 1.13/ Characteristic Values ( unless otherwise specified) J min. typ. max. 600 2 ...
... C90 100 -di/dt = 100 thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 2700 240 50 110 = 0 CES ...
... V - Volts CE Fig. 3. High Temperature Output Characteristics 100 V = 10V 125° 25° Volts GE Fig. 5. Admittance Curves © 2002 IXYS All rights reserved 200 9V 11V 160 120 1.50 11V 9V 1.25 1.00 7V 0. 10000 1000 100 IXGH 32N60CD1 IXGT 32N60CD1 T = 25° 15V ...
... D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents (ON and OFF ...
... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2002 IXYS All rights reserved 1000 T = 100° 300V nC R 800 I = 60A 30A 15A F 600 400 200 0 100 A/µs ...
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