IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4PH40UDPBF
• Description: IGBT W/DIODE 1200V 30A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH40UDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 21A
• Current - Collector (ic) (max): 41A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AC
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Capacitance, Gate: 1800 pF
• Current, Collector: 41 A
• Energy Rating: 3.73 mJ
• Polarity: N-Channel
• Power Dissipation: 160 W
• Resistance, Thermal, Junction To Case: 0.77 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.97 V
• Transistor Type: IGBT
• Dc Collector Current: 41A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 160W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *IRG4PH40UDPBF

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100
10
1
25
20
15
10
5
0
1
0.1
T = 150 C
J
Square wave:
V
CE
o
, Collector-to-Emitter Voltage (V)
60% of rated
T = 25 C
J
Ideal diodes
I
voltage
o
V
20µs PULSE WIDTH
GE
= 15V
1
10
f, Frequency (KHz)
RMS
100
10
1
5
T = 150 C
J
V
GE
6
10
, Gate-to-Emitter Voltage (V)
o
T = 25 C
J
7
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
J
sink
o
= 90°C
V
5µs PULSE WIDTH
8
CC
= 50V
9
W
100
3
10