IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet - Page 3

IGBT W/DIODE 1200V 30A TO247AC

IRG4PH40UDPBF

Manufacturer Part Number
IRG4PH40UDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRG4PH40UDPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
1800 pF
Current, Collector
41 A
Energy Rating
3.73 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.97 V
Transistor Type
IGBT
Dc Collector Current
41A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PH40UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40UDPBF
Manufacturer:
NXP
Quantity:
3 000
www.irf.com
100
10
1
25
20
15
10
5
0
1
0.1
T = 150 C
J
Square wave:
V
CE
o
, Collector-to-Emitter Voltage (V)
60% of rated
T = 25 C
J
Ideal diodes
I
voltage
o
V
20µs PULSE WIDTH
GE
= 15V
1
10
f, Frequency (KHz)
RMS
100
10
1
5
T = 150 C
J
V
GE
6
10
, Gate-to-Emitter Voltage (V)
o
T = 25 C
J
7
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
J
sink
o
= 90°C
V
5µs PULSE WIDTH
8
CC
= 50V
9
W
100
3
10

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