IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet

IGBT W/DIODE 1200V 30A TO247AC

IRG4PH40UDPBF

Manufacturer Part Number
IRG4PH40UDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRG4PH40UDPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
1800 pF
Current, Collector
41 A
Energy Rating
3.73 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.97 V
Transistor Type
IGBT
Dc Collector Current
41A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PH40UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40UDPBF
Manufacturer:
NXP
Quantity:
3 000
Features
www.irf.com
θ
θ
θ
θ
TM

G
n-channel
C
E
TO-247AC
CE(on) typ.
GE
CES
=
C
1

Related parts for IRG4PH40UDPBF

IRG4PH40UDPBF Summary of contents

Page 1

Features θ θ θ θ www.irf.com G TM n-channel  ‚ C CES = CE(on) typ TO-247AC 1 ...

Page 2

J ∆ ∆ ƒ „ J Ω Ω www.irf.com ...

Page 3

Square wave: 60% of rated voltage Ideal diodes 0 0.1 100 T = 150 20µs PULSE WIDTH Collector-to-Emitter ...

Page 4

T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 4 15V GE 80 ...

Page 5

1MHz ies res oes ce gc 3000 C ies 2000 C oes 1000 C res 0 ...

Page 6

R = Ohm 150 C ° 800V 15V Collector-to-emitter Current (A) C 100 1000 ...

Page 7

V = 200V 125° 25°C J 160 I = 16A F 120 100 di /dt - (A/µs) f 600 V = 200V 125°C J ...

Page 8

Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce td(on d(on +Vge 10% ...

Page 9

Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

Notes:  Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20) ‚ V =80%( =20V, L=10µ CES GE ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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