IXSH30N60B2D1 IXYS, IXSH30N60B2D1 Datasheet - Page 5

• Manufacturer Part Number: IXSH30N60B2D1
• Description: IGBT HS W/DIODE 600V 48A TO247
• Manufacturer: IXYS

Specifications of IXSH30N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 48A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
260
240
220
200
180
160
140
120
0.1
100
10
1
25
1
0
t
t
R
V
V
d(off)
fi
Sw itching Tim e on Tem perature
GE
CE
35
G
Fig. 13. Dependence of Turn-off
f = 1 MHz
- - - - - -
= 5Ω
5
= 15V
= 400V
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
I
C
15
65
V
= 48A
C E
24A
12A
75
20
- Volts
85
Fig. 17. Maxim um Transient Therm al Resistance
25
95
C
C
C
30
1 0
105 115 125
oes
ies
res
I
C
= 12A
24A
48A
35
Pulse Width - milliseconds
40
50
45
40
35
30
25
20
15
10
16
14
12
10
5
0
8
6
4
2
0
100 150 200 250 300 350 400 450 500 550 600
0
T
R
dV/dT < 10V/ns
5
J
G
Fig. 16. Reverse-Bias Safe
= 125
= 10Ω
10
1 00
Fig. 14. Gate Charge
º
C
15
Operating Area
Q
G
20
- nanoCoulombs
V
C E
IXSH 30N60B2D1
25
IXST 30N60B2D1
- Volts
30
35
V
I
I
40
C
G
CE
= 24A
= 1 0mA
= 300V
45
50
1 000
55