IRGSL4062DPBF International Rectifier, IRGSL4062DPBF Datasheet - Page 2

IGBT 600V 24A COPACK TO-262

IRGSL4062DPBF

Manufacturer Part Number
IRGSL4062DPBF
Description
IGBT 600V 24A COPACK TO-262
Manufacturer
International Rectifier
Datasheet

Specifications of IRGSL4062DPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.95V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
48A
Collector Emitter Voltage Vces
1.6V
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-262
Rohs Compliant
Yes
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
48A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRGS/SL4062DPbF
Notes:

ƒ
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
GE(th)
2
CC
= 80% (V
/∆TJ
/∆T
J
CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
), V
GE
= 20V, L = 100µH, R
Parameter
Parameter
J
J
G
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
= 10Ω.
(BR)CES
safely.
Min.
Min.
600
4.0
FULL SQUARE
5
Typ.
Typ.
1260
1490
0.30
1.60
2.03
2.04
1.80
1.28
775
115
600
715
104
420
840
125
129
621
-18
2.0
17
50
13
21
41
22
29
40
24
39
45
89
37
Max. Units
Max. Units
1.95
±100
201
700
901
115
6.5
2.6
25
75
20
31
53
31
41
mV/°C V
V/°C V
µA
nA
nC
pF
µJ
ns
µJ
ns
µs
µJ
ns
V
V
V
S
V
A
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
I
R
I
R
Energy losses include tail & diode reverse recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
V
Rg = 10Ω, V
T
V
V
C
C
C
F
F
C
C
C
C
C
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
CC
CC
CC
GE
G
G
G
G
= 24A
= 24A, T
= 24A, V
= 24A, V
= 24A, V
= 24A
= 24A, V
= 24A, V
= 24A, V
= 24A, V
=10Ω, L=100µH, L
= 175°C
= 175°C, I
= 175°C
= 10Ω, L = 200µH, L
= 10Ω, L = 200µH, L
= 10Ω, L = 200µH, L
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 400V
= 0V
= 30V
= 480V, Vp =600V
= 400V, Vp =600V
= 400V, I
= 15V, Rg = 10Ω, L =200µH, L
Conditions
GE
GE
, I
, I
J
C
C
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
= 175°C
= 100µA
= 1mA (25°C-175°C)
GE
GE
C
F
= 700µA
= 1.0mA (25°C - 175°C)
= 15V, T
= 15V, T
= 15V, T
= 24A, PW = 80µs
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= 600V
= 600V, T
= 96A
= 24A
= +15V to 0V
= +15V to 0V
Conditions
S
=150nH, T
J
J
J
= 25°C
= 150°C
= 175°C
GE
S
GE
S
GE
GE
S
J
= 150nH, T
= 150nH, T
= 150nH
= 175°C
=15V
= 15V
= 15V
= 15V
J
= 175°C
s
= 150nH
J
J
= 25°C
= 25°C
www.irf.com
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WF1, WF2
17, 18, 19
Ref.Fig
Ref.Fig
22, CT3
9,10,11
11, 12
13, 15
14, 16
20, 21
9, 10,
5,6,7
WF1
WF2
WF4
CT6
CT6
CT1
CT4
CT4
CT4
CT4
CT2
WF3
24
23
8
4

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