IRGSL4062DPBF International Rectifier, IRGSL4062DPBF Datasheet

IRGSL4062DPBF

Manufacturer Part Number

IRGSL4062DPBF

Description

IGBT 600V 24A COPACK TO-262

Manufacturer

International Rectifier

Datasheet

1.IRGS4062DPBF.pdf (12 pages)

Specifications of IRGSL4062DPBF

Igbt Type

Trench

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

1.95V @ 15V, 24A

Current - Collector (ic) (max)

48A

Power - Max

250W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-262-3 (Straight Leads)

Transistor Type

IGBT

Dc Collector Current

48A

Collector Emitter Voltage Vces

1.6V

Collector Emitter Voltage V(br)ceo

600V

Operating Temperature Range

-55Â°C To +175Â°C

Transistor Case Style

TO-262

Rohs Compliant

Yes

Channel Type

Configuration

Single

Collector-emitter Voltage

600V

Collector Current (dc) (max)

48A

Gate To Emitter Voltage (max)

±20V

Pin Count

3 +Tab

Mounting

Through Hole

Operating Temperature (max)

175C

Operating Temperature Classification

Military

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

Features

• Low V

• Low switching losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (I

• Positive V

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Absolute Maximum Ratings

Thermal Resistance

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

STG

CES

θJC

θCS

θJA

Low V

@ T

(IGBT)

(Diode)

= 25°C

= 100°C

= 25°C

= 100°C

= 25°C

= 100°C

CE (ON)

and Low Switching losses

Trench IGBT Technology

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current

Clamped Inductive Load Current

Diode Continous Forward Current

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

Temperature co-efficient

Parameter

)

n-channel

Gate

IRGS4062DPbF

Min.

300 (0.063 in. (1.6mm) from case)

–––

IRGSL4062DPbF

Pak

IRGS4062DPbF

Collector

-55 to +175

Max.

Typ.

IRGSL4062DPbF

0.50

600

±20

±30

250

125

–––

≥ 5µs, T

CE(on)

TO-262

= 24A, T

CES

Emitter

typ. = 1.65V

Max.

0.60

1.53

–––

J(max)

= 600V

= 100°C

www.irf.com

= 175°C

Units

12/07/09

°C/W

°C

Related parts for IRGSL4062DPBF

IRGSL4062DPBF Summary of contents

Page 1

... CES I = 24A 100° ≥ 5µ 175°C SC J(max) V typ. = 1.65V CE(on Pak TO-262 IRGSL4062DPbF C E Collector Emitter Max. 600 ±20 ±30 250 125 -55 to +175 300 (0.063 in. (1.6mm) from case) Min. Typ. Max. ––– ––– ...

Page 2

IRGS/SL4062DPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage ...

Page 3

T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 ...

Page 4

IRGS/SL4062DPbF 18V 80 VGE = 15V 70 VGE = 12V VGE = 10V 60 VGE = 8. (V) Fig Typ. IGBT ...

Page 5

E OFF 1000 800 E ON 600 400 200 (A) Fig Typ. Energy Loss vs 175° 200µ 400V ...

Page 6

IRGS/SL4062DPbF 500 di F /dt (A/µs) Fig Typ. Diode 400V 15V 24A 1000 800 ...

Page 7

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.10 0.1 0.05 0.02 0.01 ...

Page 8

IRGS/SL4062DPbF Fig.C.T.1 - Gate Charge Circuit (turn-off) 4x DUT Fig.C.T.3 - S.C. SOA Circuit R = DUT Rg Fig.C.T.5 - Resistive Load Circuit clamp / DU ...

Page 9

I 400 I CE 300 200 5% V 100 0 E OFF -100 -0.40 0.10 Time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT -10 ...

Page 10

IRGS/SL4062DPbF 2 2 UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ 6TT@H7G` `@6SÃÃ2Ã! GPUÃ8P @ X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ Q6SUÃIVH7@S 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 www.irf.com IRGS/SL4062DPbF DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP ...

Page 12

IRGS/SL4062DPbF 2 Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION ...

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