IRGB5B120KDPBF International Rectifier, IRGB5B120KDPBF Datasheet - Page 2

• Manufacturer Part Number: IRGB5B120KDPBF
• Description: IGBT W/DIODE 1200V 12A TO220AB
• Manufacturer: International Rectifier

Specifications of IRGB5B120KDPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 89W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB5B120KDPBF

IRGB5B120KDPbF
Electrical Characteristics @ T
Switching Characteristics @ T
Note:

‚
RBSOA
SCSOA
V
∆V
V
V
∆
g
I
V
I
Qg
Qge
Qgc
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
Erec
t
I
CES
GES
d(on)
d(off)
f
d(on)
r
d(off)
f
r
rr
rr
V
fe
GE(th)
(BR)CES
CE(on)
FM
on
off
tot
on
off
tot
oes
ies
res
Energy losses include "tail" and diode reverse recovery.
2
(BR)CES
GE(th)
V
CC
= 80% (V
/
∆
/∆T
T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode –––
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current –––
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
CES
), V
Parameter
Parameter
GE
= 15V, L = 100µH, R
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
= 50Ω.
1200 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 1.15 –––
––– 2.75
––– 3.36
–––
–––
–––
––– 2.13 2.45
––– 2.38 2.75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
–––
–––
10
FULL SQUARE
–––
––– ±100
390
330
720
100
440
370
810 1220
110
370
360
160
5.0
-11
2.6
3.7
9.0
–––
66
25
13
22
19
19
21
18
22
33
11
–––
––– mV/°C V
–––
100
200
440
440
880
120
660
560
150
–––
–––
–––
–––
–––
–––
3.0
3.7
6.0
5.6
–––
38
20
29
27
25
27
25
29
V/°C
µA
nA
nC
V
V
V
S
V
µJ
ns
µJ
ns
pF
µs
µJ
ns
A
V
V
I
I
V
V
V
V
I
I
V
I
V
V
I
V
Ls = 150nH
I
V
Ls = 150nH, T
I
V
Ls = 150nH
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
T
V
T
V
V
C
C
F
F
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
CC
GE
= 6.0A
= 6.0A
= 6.0A
= 6.0A
= 6.0A
= 6.0A, V
= 6.0A, V
= 6.0A, V
= 6.0A, V
= 150°C, I
= 150°C, Vp =1200V, R
= 125°C
= V
= 0V, I
= 0V, I
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 0V
= 1000V, V
= 800V
= 15V
= 15V,R
= 15V, R
= 15V,R
= 15V, R
= 30V
= 900V, V
= 600V, I
= 15V,R
GE
GE
, I
, I
C
C
CE
CC
CC
CC
CC
C
CE
C
C
Conditions
V
G
G
V
G
= 1.0mA, (25°C-125°C)
C
= 500µA
T
Conditions
G
G
F
= 250µA
= 1.0mA, (25°C-125°C)
GE
GE
= 6.0A, PW=80µs
= 50Ω, L =3.7mH
J
= 50Ω, L =3.7mH
J
GE
= 50Ω, Ls = 150nH
J
GE
= 1200V
= 600V
= 600V
= 600V
= 600V
= 24A, Vp =1200V
= 1200V, T
= 50Ω L =3.7mH
= 50Ω L =3.7mH
= 6.0A, L = 2.0mH
= 25°C
= 125°C
= 125°C
= 15V
= 15V
= +15V to 0V,
= +15V to 0V
T
T
www.irf.com
J
J
= 25°C
= 125°C
T
J
G
J
= 125°C
= 50Ω
= 125°C
R
G
‚
=50Ω
‚
CT4,WF3
5, 6,7
9,10,11
9,10,11
12
20, 21
Ref.Fig.
14, 16
Ref.Fig.
WF1WF2
13,15
17,18,19
WF4
8
CT4
WF1
WF2
CT4
CT4
CT3
CT1
22
CT2
CT4
23
4