IRGB5B120KDPBF International Rectifier, IRGB5B120KDPBF Datasheet
IRGB5B120KDPBF
Specifications of IRGB5B120KDPBF
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IRGB5B120KDPBF Summary of contents
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... T Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRGB5B120KDPbF n-channel TO-220AB Max. 1200 12 6.0 24 6.0 24 ± 20 ...
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... IRGB5B120KDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆ ∆ T Temperature Coeff. of Threshold Voltage ––– GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...
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... T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 0.1 0. 100 V CE (V) Fig Forward SOA T = 25°C; T 150°C ≤ www.irf.com IRGB5B120KDPbF 100 Fig Power Dissipation vs. Case 100 10 10 µs 100 µs 1 1ms 10ms 0 10 1000 10000 50 100 150 T C (° ...
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... IRGB5B120KDPbF 18V VGE = 15V 16 VGE = 12V VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = -40° 80µ 18V 15V 12V 10V 8. (V) Fig Typ. IGBT Output Characteristics T = 125° 80µ Fig Typ. IGBT Output Characteristics 0 Fig Typ. Diode Forward Characteristics ...
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... V GE (V) Fig Typical -40° (V) Fig Typical 125°C J www.irf.com IRGB5B120KDPbF 6. 12A 24A Fig Typical 12A 24A 125° Fig Typ. Transfer Characteristics vs 6. 12A 24A (V) vs 25° 25° 125° 25° ( 50V 10µ ...
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... IRGB5B120KDPbF 1200 E ON 1000 800 600 400 200 (A) Fig Typ. Energy Loss vs 125°C; L=3.7mH 50Ω 15V G GE 1400 1200 1000 800 600 400 200 0 0 100 200 Ω ) Fig Typ. Energy Loss vs 125°C; L=3.7mH 6.0A 15V 1000 E OFF 100 ...
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... Fig Typical Diode 125° 100 200 300 di F /dt (A/µs) Fig. 19- Typical Diode 600V 15V 6.0A 125° www.irf.com IRGB5B120KDPbF Ω 150 Ω 270 Ω 470 Ω Fig Typical Diode I vs 1.6 1.2 470 Ω 0.8 0 400 500 Fig Typical Diode Q vs ...
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... IRGB5B120KDPbF 500 400 300 200 100 0 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz Ω 150 Ω 270 Ω 470 Ω (A) Fig Typical Diode E vs 125° Cies Coes 6 Cres 100 Fig Typical Gate Charge vs 600V 800V Total Gate Charge (nC 6.0A 600µH CE www ...
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... Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGB5B120KDPbF τ J τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci i/Ri 0 ...
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... IRGB5B120KDPbF DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver D C DUT Fig.C.T.3 - S.C. SOA Circuit 10 L VCC 80 V diode clamp / 900V DUT Rg Fig.C.T.5 - Resistive Load Circuit L DUT 1000V Rg Fig.C.T.2 - RBSOA Circuit DUT DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit VCC www.irf.com VCC ...
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... Fig.WF2-Typ. Turn-off Loss Waveform @ T =125°C using Fig. CT4 Irr - time ( µ Fig.WF3-Typ. Diode Recovery Waveform @ T =125°C using Fig. CT4 J www.irf.com IRGB5B120KDPbF 1800 8 1600 7 1400 6 1200 5 1000 4 800 3 600 2 400 1 200 0 0 -200 -1 0.3 0.8 1 Fig.WF2-Typ. Turn-on Loss Waveform @ T 8 1000 ...
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... IRGB5B120KDPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...