STGW35NC60WD STMicroelectronics, STGW35NC60WD Datasheet - Page 7

IGBT N-CH 40A 600V TO-247

STGW35NC60WD

Manufacturer Part Number
STGW35NC60WD
Description
IGBT N-CH 40A 600V TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheets

Specifications of STGW35NC60WD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 20A
Current - Collector (ic) (max)
70A
Power - Max
260W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
250W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
497-7488-5
STGW35NC60WD

Available stocks

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Part Number:
STGW35NC60WD
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IGBT ordering information
IGBT module ordering information
The option digit is present only for IGBT power modules, not IGBT intelligent power modules (IPM)
Package type
D...T4 = DPAK (tape & reel)
B...T4 = D ² PAK (tape & reel)
D...-1 = IPAK
B...-1 = I ² PAK
I C current at T C = 100 °C
Application
3P = 3-phase bridge (sixpack)
IP = IPM
Package
2 M SEMITOP2
3 M SEMITOP3
WA = TO-247 long leads
WF = TO-3PF
S = SDIP-25L Molded
L = SDIP-38L Molded
W = TO-247
P = TO-220
Y = Max247
E = ISOTOP
S = SO-8
F = TO-220FP
J = TO-264
IGBT
IGBT
®
ST
ST G yy zz
G
W
35 HF 60 WD
iii
w
Technology
NC = N-channel planar PT with life time control
NB = N-channel planar PT
HF = N-channel advanced planar PT
vvv
Technology
N = Fast
K = Short circuit rugged
I C current at T C = 80 °C (power modules)
I C current at T C = 25 °C (IPM)
Special features
L = Logic level
Z = Internally clamped for automotive
S = Up to 1 kHz low drop
H = Up to 50 kHz
K = Up to 50 kHz short circuit rugged
V = Up to 50 kHz high power
W = Up to 100 kHz
D = Anti-parallel diode
V CES voltage divided by 10
V CES voltage divided by 10
Option
B = 1 -Φ input diode bridge
D = 3 -Φ input diode bridge
x

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