STGP10NB60SD STMicroelectronics, STGP10NB60SD Datasheet - Page 4

• Manufacturer Part Number: STGP10NB60SD
• Description: IGBT N-CHAN 600V 20A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP10NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 31.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5008-5

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
V
Symbol
Symbol
V
j
V
(BR)CES
(BR)ECS
g
=25 °C unless otherwise specified)
CE(sat)
C
I
I
C
C
GE(th)
GES
CES
Q
fs
oes
ies
res
g
(1)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Collector-emitter breakdown
voltage (V
Emitter-collector breakdown
voltage (V
Gate-emitter leakage
current (V
Collector cut-off current
(V
Gate threshold voltage
Collector-emitter saturation
voltage
Forward transconductance
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
GE
GE
= 0)
= 0)
= 0)
Doc ID 11860 Rev 2
V
V
V
(see Figure 19)
I
I
V
V
V
V
V
V
V
T
V
C
C
GE
CE
CE
j
GE
CE
CE
CE
GE
GE
GE
CE
= 125 °C
= 250 µA
= 1 mA
= ±20 V
= 600 V
= 600 V, T
= V
= 15 V, I
= 15 V, I
= 15 V, I
= 25 V, f = 1 MHz, V
= 400 V, I
= 15 V
= 15 V
Test conditions
Test conditions
GE
, I
,
C
C
C
C
I
= 250 µA
= 5 A
= 10 A
= 10 A,
C
C
j
= 125 °C
= 10 A
= 10 A,
STGF10NB60SD, STGP10NB60SD
GE
= 0
Min. Typ. Max.
Min.
600
-
-
2.5
20
5
610
65
12
33
Typ. Max. Unit
1.15
1.35
1.25
±100
1.75
100
-
-
10
5
Unit
nC
pF
pF
pF
nA
µA
µA
V
V
V
V
S