STGW19NC60W STMicroelectronics, STGW19NC60W Datasheet - Page 4

• Manufacturer Part Number: STGW19NC60W
• Description: IGBT N-CH 19A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW19NC60W

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 42A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-9062-5; STGW19NC60W

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
I
V
V
V
V
V
V
STGB19NC60W - STGP19NC60W - STGW19NC60W
C
V
V
V
V
Figure 16
GE
GE
CE
CE
CE
GE
CE
= 1 mA
CE
GE
CE
GE
= V
= 600 V
= 600 V, T
= 15 V, I
= 15V, I
= ± 20 V
= 15 V
= 25 V, f = 1MHz,
= 0
= 390 V, I
= 15 V,
Test conditions
Test conditions
GE
, I
,
C
C
I
C
C
=12A, Tc=125°C
= 250 µA
= 12 A
= 12 A
C
C
= 125°C
= 12 A,
Min.
Min.
3.75
600
1180
Typ.
Typ.
130
2.1
1.8
26
53
10
21
10
Max.
Max.
±100
5.75
150
2.5
1
Unit
Unit
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S