STGP20NC60V STMicroelectronics, STGP20NC60V Datasheet - Page 4

• Manufacturer Part Number: STGP20NC60V
• Description: IGBT N-CHAN 60A 600V TO220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP20NC60V

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 200W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4355-5

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
1. Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
g
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
fs
Q
oes
ies
res
ge
gc
(1)
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter cut-off
current (V
Gate-emitter cut-off
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static electrical characteristics
Dynamic electrical characteristics
GE
= 0)
Parameter
Parameter
GE
CE
= 0)
= 0)
I
V
V
V
V
V
V
C
V
V
V
V
(see Figure 17)
GE
GE
CE
CE
CE
GE
CE
STGB20NC60V - STGP20NC60V - STGW20NC60V
= 1 mA
GE
GE
CE
CE
= V
=15 V, I
=15 V, I
= 600 V
= 600 V, Tc=125 °C
= ±20 V
= 15 V
=0
= 25 V, f = 1 MHz,
= 390 V, I
= 15 V,
Test conditions
GE
Test conditions
, I
,
C
C
C
I
= 20 A,T
C
= 20 A
= 250 µA
= 20 A
C
= 20 A,
C
= 125 °C
Min.
Min.
3.75
600
2200
Typ.
225
100
50
16
45
Typ.
1.8
1.7
15
Max.
± 100
Max. Unit
5.75
2.5
10
1
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
S