STGP6NC60HD STMicroelectronics, STGP6NC60HD Datasheet - Page 4

• Manufacturer Part Number: STGP6NC60HD
• Description: IGBT N-CH 600V 15A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP6NC60HD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 3A
• Current - Collector (ic) (max): 15A
• Power - Max: 56W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 56W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5122-5

Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 3.
Table 4.
V
Symbol
Symbol
V
V
CASE
BR(CES)
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
I
CL
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Turn-off SOA minimum
current
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
= 0)
STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
I
V
V
V
V
V
V
V
V
V
V
(see Figure 18)
V
R
C
GE
GE
CE
CE
CE
GE
CE
GE
GE
CE
CE
clamp
G
= 1mA, V
= V
= 10Ω , V
= 15V, I
= 15V, I
= Max rating,T
= ±20V , V
= Max rating,T
= 15V
= 25V, f = 1MHz,
= 0
= 390V, I
= 15V,
Test conditions
Test conditions
= 390V, Tj = 150°C,
GE
, I
,
I
C
GE
C
C
C
GE
= 3A, Tc= 125°C
= 250 µA
= 3A
= 3A
C
= 0
CE
= 15V
= 3A,
= 0
C
C
= 25°C
= 125°C
Min.
3.75
600
Min.
Typ.
Typ. Max.
13.6
1.9
1.7
205
5.5
3.4
5.1
3
32
19
Max.
±100
5.75
2.5
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
A
V
V
V
V
S