STGF3NC120HD STMicroelectronics, STGF3NC120HD Datasheet - Page 5

• Manufacturer Part Number: STGF3NC120HD
• Description: IGBT N-CHAN 6A 1200V TO220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF3NC120HD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 6A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 6 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 6A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Pd: 25W
• Transistor Case Style: TO-220FP
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4353-5

STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Table 6.
Table 7.
1.
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
Eon
Eon
t
t
E
E
t
t
t
t
r
r
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C)
(V
d
(V
d
d(on)
d(on)
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
off
off
E
E
I
I
(
(
Q
Q
V
t
t
t
t
rrm
rrm
t
t
off
off
r
r
f
f
off
off
ts
ts
rr
rr
F
rr
rr
(2)
(2)
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 11089 Rev 4
V
R
(see Figure 20)
V
R
T
V
R
(see Figure 20)
V
R
T
V
R
(see Figure 20)
V
R
T
I
I
I
di/dt = 100 A/µs
(see Figure 23)
I
T
di/dt = 100 A/µs
(see Figure 23)
J
F
F
F
F
CC
CC
G
G
J
J
CC
CC
CC
CC
G
G
G
G
J
= 125 °C
= 125 °C
= 125 °C
= 10 Ω, V
= 10 Ω, V
= 1.5 A
= 1.5 A, T
= 3 A, V
= 3 A, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 125 °C,
= 800 V, I
= 800 V, I
= 800 V, I
= 800 V, I
= 800 V, I
= 800 V, I
Test conditions
Test conditions
Test conditions
R
R
(see Figure 20)
(see Figure 20)
(see Figure 20)
GE
GE
GE
GE
GE
GE
J
= 40 V,
= 40 V,
C
C
= 125 °C
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 3 A
= 3 A
= 3 A
= 3 A
= 3 A
= 3 A
Electrical characteristics
Min.
Min.
Min.
-
-
-
-
-
-
-
-
-
Typ.
Typ.
14.5
Typ.
880
770
118
250
132
210
470
133
3.5
236
290
526
360
620
980
1.6
1.3
3.3
4.2
15
72
51
85
64
4
Max.
Max.
Max.
2.0
-
-
-
-
-
-
Unit
A/µs
A/µs
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
V
V
A
A
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