MBR160 ON Semiconductor, MBR160 Datasheet - Page 2

• Manufacturer Part Number: MBR160
• Description: DIODE SCHOTTKY 1A 60V DO-41
• Manufacturer: ON Semiconductor

Specifications of MBR160

• Voltage - Forward (vf) (max) @ If: 750mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: MBR160OS

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
0.07
0.05
0.03
0.02
(i
(i
(i
(T
(T
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
F
F
F
0
L
L
= 0.1 A)
= 1.0 A)
= 3.0 A)
0.2
= 25°C)
= 100°C)
0.4
Figure 1. Typical Forward Voltage
T
J
v
F
= 150°C
, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
0.8
100°C
Characteristic
1.0
(T
L
= 25°C unless otherwise noted) (Note 1)
1.2
25°C
MBR150, MBR160
1.4
http://onsemi.com
1.6
*The curves shown are typical for the highest voltage device in the volt-
age grouping. Typical reverse current for lower voltage selections can
be estimated from these same curves if V
2
0.005
0.002
0.001
0.05
0.02
0.01
5.0
2.0
1.0
0.5
0.2
0.1
5.0
4.0
3.0
2.0
1.0
10
0
0
0
I
PK
Figure 3. Forward Power Dissipation
10
/I
Figure 2. Typical Reverse Current*
I
AV
F(AV)
1.0
= 20
, AVERAGE FORWARD CURRENT (AMPS)
V
Symbol
20
R
, REVERSE VOLTAGE (VOLTS)
v
i
R
10
F
2.0
T
J
30
= 150°C
5
R
is sufficiently below rated V
40
p
3.0
0.550
0.750
1.000
Max
0.5
5.0
50
4.0
SQUARE
60
WAVE
100°C
75°C
25°C
125°C
Unit
mA
dc
V
R
5.0
70
.