MBR160 ON Semiconductor, MBR160 Datasheet

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MBR160

Manufacturer Part Number
MBR160
Description
DIODE SCHOTTKY 1A 60V DO-41
Manufacturer
ON Semiconductor
Datasheet

Specifications of MBR160

Voltage - Forward (vf) (max) @ If
750mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
MBR160OS

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MBR150, MBR160
Axial Lead Rectifiers
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Mechanical Characteristics:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 8
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1)
(V
R
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz, T
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
Thermal Resistance, Junction−to−Ambient
The MBR150/160 series employs the Schottky Barrier principle in a
Leads are Readily Solderable
260°C Max. for 10 Seconds
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
These are Pb−Free Devices*
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Polarity: Cathode Indicated by Polarity Band
qJA
R(equiv)
= 80°C/W, P.C. Board Mounting, T
v 0.2 V
Characteristic
R
(dc), T
Rating
MBR160 is a Preferred Device
L
= 90°C,
L
= 70°C)
A
(Notes 1 and 2)
MBR150
MBR160
MBR150
MBR160
= 55°C)
Symbol
V
Symbol
T
V
V
R(RMS)
R
I
J
RWM
FSM
RRM
V
, T
I
qJA
O
R
stg
(for one
− 65 to
Value
cycle)
+150
Max
1.0
50
60
35
42
80
25
1
°C/W
Unit
Unit
°C
V
V
A
A
1.0 AMPERE − 50 AND 60 VOLTS
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
SCHOTTKY BARRIER
A
MBR1x0 = Device Code
Y
WW
G
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
RECTIFIERS
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x = 5 or 6
YYWW G
MBR1x0
Publication Order Number:
A
G
AXIAL LEAD
CASE 59
STYLE 1
DO−41
MBR150/D

Related parts for MBR160

MBR160 Summary of contents

Page 1

... MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high− ...

Page 2

... INSTANTANEOUS VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage MBR150, MBR160 = 25°C unless otherwise noted) (Note 5.0 2.0 25°C 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0 *The curves shown are typical for the highest voltage device in the volt- age grouping ...

Page 3

... Typical Values for R in Still Air qJA Lead Length, L (in) Mounting Method 1/8 1/4 1 — 50 MBR150, MBR160 THERMAL CHARACTERISTICS temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.: r(t) = r(t transient thermal resistance at time, t 2.0 5 100 t, TIME (ms) Figure 4. Thermal Response ...

Page 4

... Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. MBR150, MBR160 (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are 100° ...

Page 5

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MBR150, MBR160 PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U NOTES: 1 ...

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