SIDC19D60SIC3 Infineon Technologies, SIDC19D60SIC3 Datasheet - Page 2

• Manufacturer Part Number: SIDC19D60SIC3
• Description: DIODE SCHOTTKY 600V 6A WAFER
• Manufacturer: Infineon Technologies

Specifications of SIDC19D60SIC3

• Voltage - Forward (vf) (max) @ If: 1.7V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 300pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Wafer
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013870

Maximum Ratings
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
Continuous forward current limited by
T
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by T
Non repetitive peak forward current
Operating junction and storage
temperature
Static Electrical Characteristics
Parameter
Reverse leakage current
Forward voltage drop
Dynamic Electrical Characteristics
Parameter
Total capacitive charge
Switching time
Total capacitance
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.04.2004
jmax
jmax
I
V
Q
t
C
Symbol
Symbol
R
r r
F
C
Symbol
V
V
I
I
I
I
T
V
I
I
di/dt=200A/ s
V
I
di/dt=200A/ s
V
I
di/dt=200A/ s
T
f=1MHz
F
F S M
FRM
F M A X
F
F
F
F
j
R
R
j
R R M
RSM
=6A
=6A
=6A
R
(tested on chip), T j =25 C, unless otherwise specified
=6A
=25 C
=400V
= 4 0 0 V
, T
=600V
, at T
s t g
Conditions
Conditions
j
T
= 25 C, unless otherwise specified, tested at component
C
=25 C, t
T
C
T
T
T
T
T
V
V
V
= 100 C, T
C
j
j
j
j
R
R
R
= 2 5 C
= 2 5 C
=25 C, tp=10µs
= 1V
=300V
=600V
= 1 5 0 ° C
= 1 5 0 ° C
Condition
P
D = 0 . 1
=10 ms sinusoidal
SIDC19D60SIC3
j
= 1 5 0 C,
min.
min.
Typ.
Typ.
Value
Value
n.a.
300
1.5
20
21
20
15
-55...+175
Value
21.5
600
600
28
60
6
max.
max.
200
1.7
Unit
V
A
Unit
µA
V
Unit
nC
ns
pF
C