STTH3R04 STMicroelectronics, STTH3R04 Datasheet - Page 4

• Manufacturer Part Number: STTH3R04
• Description: DIODE ULT FAST 400V 3A DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STTH3R04

• Voltage - Forward (vf) (max) @ If: 1.5V @ 3A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
10
90
80
70
60
50
40
30
20
10
1.E-01
0
1
10
1
S
Single pulse
Cu
SMB
=1cm²
Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMB (epoxy
FR4, copper thickness = 35 µm)
Junction capacitance versus
reverse voltage applied
(typical values)
Reverse recovery time versus
dI
1.E+00
F
/dt (typical values)
10
dI
1.E+01
F
V
/dt(A/µs)
100
R
(V)
T
T
j
j
=25 °C
=125 °C
100
1.E+02
V
OSC
F=1MHz
T
V
=30mV
j
=25°C
t
I
R
P
F
=320 V
= 3 A
(s)
RMS
1.E+03
1000
1000
Figure 6.
Figure 8.
Figure 10. Peak reverse recovery current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
1.E-01
10
0
10
V
I
R
F
=320 V
Single pulse
= 3 A
V
S
I
R
F
Cu
=320 V
= 3 A
SMC
=1cm²
Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMC
Reverse recovery charges versus
dI
versus dI
1.E+00
F
/dt (typical values)
F
/dt (typical values)
1.E+01
100
100
T
T
j
T
=125 °C
T
j
j
=125 °C
=25 °C
j
=25 °C
1.E+02
dI
dI
F
F
/dt(A/µs)
STTH3R04
/dt(A/µs)
t
P
(s)
1.E+03
1000
1000