BYW81P-200 STMicroelectronics, BYW81P-200 Datasheet - Page 3

DIODE FAST REC 15A 200V TO-220AC

BYW81P-200

Manufacturer Part Number
BYW81P-200
Description
DIODE FAST REC 15A 200V TO-220AC
Manufacturer
STMicroelectronics
Datasheet

Specifications of BYW81P-200

Voltage - Forward (vf) (max) @ If
1.15V @ 25A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
15A
Current - Reverse Leakage @ Vr
20µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
40ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-

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Part Number:
BYW81P-200
Manufacturer:
ST
0
Fig. 1: Average forward power dissipation versus
average forward current.
20.0
17.5
15.0
12.5
10.0
Fig. 3: Forward voltage drop versus forward
current (maximum values).
Fig. 5: Non repetitive surge peak forward current
versus overload duration.
(BYW81P)
160
150
140
130
120
110
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.5
5.0
2.5
0.0
90
80
70
60
50
40
30
20
10
0.001
0
0.1
0
P F(av)(W)
I M(A)
VFM(V)
IM
Tj=125 C
2.5
o
t
=0.5
=0.05
5
0.01
1
7.5
I F(av)(A)
=0.1
IFM(A)
t(s)
10
10
=0.2
12.5
0.1
=0.5
15
=tp/T
Tc=115 C
17.5
Tc=25 C
Tc=75 C
100 200
T
=1
tp
o
o
o
20
1
BYW81P-200 / BYW81PI-200 / BYW81G-200
Fig. 2: Peak current versus form factor.
350
300
250
200
150
100
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
0.5
0.2
Fig. 6: Non repetitive surge peak forward current
versus overload duration.
(BYW81PI / BYW81G)
120
110
100
1.0
0.1
50
90
80
70
60
50
40
30
20
10
0.001
1.0E-03
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
K
I M(A)
K =
I M(A)
= 0 . 1
IM
= 0 . 2
Zth(j-c) (tp. )
Single pulse
= 0 . 5
P=10W
Rth(j-c)
P=20W
t
=0.5
1.0E-02
0.01
P=30W
tp(s)
t(s)
1.0E-01
0.1
=tp/T
=tp/T
T
tp
Tc=25 C
Tc=90 C
Tc=60 C
T
1.0E+00
I
tp
M
o
o
o
3/6
1

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