STTA1512PIRG STMicroelectronics, STTA1512PIRG Datasheet - Page 3

• Manufacturer Part Number: STTA1512PIRG
• Description: DIODE FAST 1200V 15A DOP-3I
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA1512PIRG

• Voltage - Forward (vf) (max) @ If: 2.1V @ 15A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 105ns
• Mounting Type: Through Hole, Radial
• Package / Case: DOP3I-2 Insulated (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-3533

Fig. 1: Conduction losses versus average
current.
40
30
20
10
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 5: Reverse recovery time versus dI
confidence).
800
700
600
500
400
300
200
100
0
1E-4
0
0
P1(W)
0
Zth(j-c)/Rth(j-c)
trr(ns)
= 0.1
= 0.5
= 0.2
IF=0.5*IF(av)
2
Single pulse
100
IF=2*IF(av)
4
1E-3
IF=IF(av)
6
= 0.1
200
dIF/dt(A/µs)
8
IF(av) (A)
tp(s)
1E-2
= 0.2
10
300
12
= 0.5
14
1E-1
400
16
=tp/T
F
VR=600V
Tj=125°C
/dt (90%
= 0.1
T
18
1E+0
tp
500
20
Fig. 2: Forward voltage drop versus forward
current (maximum values).
200
100
Fig. 4: Peak reverse recovery current versus dI
(90% confidence).
50
40
30
20
10
Fig. 6: Softness factor (tb/ta) versus dI
values).
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
10
0
1
0
0.0
IRM(A)
0
IFM(A)
S factor
VR=600V
Tj=125°C
IF<2*IF(av)
Tj=125°C
0.5
100
100
1.0
1.5
IF=IF(av)
200
dIF/dt(A/µs)
dIF/dt(A/µs)
200
VFM(V)
2.0
IF=2*IF(av)
300
300
2.5
STTA1512P/PI
IF=0.5*IF(av)
3.0
400
400
F
/dt (typical
VR=600V
Tj=125°C
3.5
F
500
500
3/9
4.0
/dt