BYW98-200 STMicroelectronics, BYW98-200 Datasheet - Page 3

• Manufacturer Part Number: BYW98-200
• Description: DIODE FAST REC 200V 3A DO-201AD
• Manufacturer: STMicroelectronics

Specifications of BYW98-200

• Voltage - Forward (vf) (max) @ If: 1.2V @ 9A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-3133-3

Fig. 3: Thermal resistance versus lead length.
90
80
70
60
50
40
30
20
10
Fig. 1: Average forward power dissipation versus
average forward current.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 5: Forward voltage drop versus forward
current (maximum values).
70.00
10.00
0
1.00
0.10
0.0
5
Rth(°C/W)
PF(av)(W)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IFM(A)
0.5
10
1.0
(Typical values)
Tj=100°C
Lleads(mm)
1.5
IF(av) (A)
Rth(j-a)
Rth(j-l)
15
2.0
Tj=100°C
VFM(V)
Tj=25°C
2.5
20
=tp/T
3.0
T
tp
3.5
25
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu) = 35µm).
1.00
0.10
0.01
Fig. 2: Average forward current versus ambient
temperature ( =0.5).
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
100
50
20
10
1E-1
0
1
IF(av)(A)
Zth(j-a)/Rth(j-a)
C(pF)
= 0.2
= 0.1
= 0.5
=tp/T
Single pulse
25
T
Rth(j-a)=Rth(j-l)
tp
1E+0
50
Rth(j-a)=75°C/W
Tamb(°C)
10
VR(V)
75
tp(s)
1E+1
100
BYW98-200
1E+2
=tp/T
125
100
T
F=1MHz
Tj=25°C
tp
5E+2
150
200
3/5