SMBYW01-200 STMicroelectronics, SMBYW01-200 Datasheet - Page 3

• Manufacturer Part Number: SMBYW01-200
• Description: DIODE FAST REC 200V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of SMBYW01-200

• Voltage - Forward (vf) (max) @ If: 900mV @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-2509-2

Fig. 1: Average forward power dissipation versus
average forward current .
Fig. 3: Average forward current versus ambient
temperature ( =0.5).
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35 m).
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.00
0.10
0.01
0.0
1E-2
0
IF(av)(A)
PF(av)(W)
Zth(j-a)(°C/W)
= 0.2
Single pulse
= 0.5
= 0.1
0.2
25
1E-1
0.4
= 0.05
50
1E+0
Tamb(°C)
IF(av) (A)
Rth(j-a)=100°C/W
= 0.1
tp(s)
0.6
75
Rth(j-a)=Rth(j-l)
= 0.2
1E+1
100
0.8
= 0.5
1E+2
125
1.0
= 1
5E+2
150
1.2
Fig. 2: Peak current versus form factor.
10
Fig. 4: Non repetitive surge peak forward current
versus overload duration.
1E-3
Fig 6: Forward voltage drop versus forward current
(maximum values).
50.00
10.00
8
7
6
5
4
3
2
9
8
7
6
5
4
3
2
1
0
1.00
0.10
0.01
0.0
IM(A)
IM(A)
0.0
VFM(V)
0.1
0.2
0.4
Tj=125°C
P=1.5W
0.3
1E-2
0.8
0.4
P=1.0W
t(s)
IFM(A)
0.5
Ta=25°C
Tj=25°C
1.2
Ta=75°C
0.6
1E-1
P=0.5W
SMBYW01-200
1.6
0.7
0.8
Ta=50°C
P=0.25W
2.0
0.9
1E+0
2.4
3/5
1.0