STTA106U STMicroelectronics, STTA106U Datasheet - Page 3

• Manufacturer Part Number: STTA106U
• Description: DIODE ULT FAST 600V 1A SMB
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA106U

• Voltage - Forward (vf) (max) @ If: 1.75V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: 497-2494-2

Fig. 1: Conduction losses versus average current.
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 3: Peak reverse recovery current versus dI
(90% confidence).
8
7
6
5
4
3
2
1
0
Fig. 5: Softness factor (tb/ta) versus dI
values).
1.6
1.4
1.2
1.0
0.8
0.6
0
IRM(A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
S factor
P1(W)
VR=400V
Tj=125°C
10
20
50
= 0.05
30
dIF/dt(A/µs)
dIF/dt(A/µs)
= 0.1
40
IF(av) (A)
100
50
= 0.2
60
IF=2*IF(av)
70
= 0.5
150
IF=IF(av)
80
F
/dt (typical
IF=2*IF(av)
VR=400V
Tj=125°C
= 1
90
F
200
100
/dt
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
1E+1
1E+0
Fig. 4: Reverse recovery time versus dI
confidence).
225
200
175
150
125
100
Fig. 6: Relative variation of dynamic parameters
versus junction temperature (reference Tj = 125°C).
(Reference: Tj=125°C)
1.1
1.0
0.9
0.8
0.7
1E-1
1E-2
75
50
25
0
25
0
0.0
trr(ns)
IFM(A)
20
0.5
40
50
60
IF=2*IF(av)
Tj=125°C
1.0
S factor
dIF/dt(A/µs)
80
Tj(°C)
VFM(V)
100 120 140 160 180 200
75
1.5
Tj=25°C
2.0
IRM
100
IF=IF(av)
STTA106/U
2.5
F
VR=400V
Tj=125°C
/dt (90%
125
3/8
3.0