CSD10060G Cree Inc, CSD10060G Datasheet - Page 3

• Manufacturer Part Number: CSD10060G
• Description: DIODE SCHOTTKY 600V 10A TO263-2
• Manufacturer: Cree Inc

Specifications of CSD10060G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.8V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 16.5A
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 550pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Termination Type: SMD
• Junction Temperature, Tj Max: 175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance
3
100
100.0
90
80
70
60
50
40
30
20
10
25
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
1.0E+01
1.0E+00
25
1.0E-01
1.0E-02
1.0E-03
CSD10060 Rev. S
1.E-07
50 75 100 125 150 175 200
50
Figure 3. Current Derating
DC
75
70% Duty
Current Derating
1.E-06
100
Case Temperature
50% Duty
125
30% Duty
Figure 5. Transient Thermal Impedance
150
10% Duty
1.E-05
30% Duty*
50% Duty*
70% Duty*
DC
10% Duty*
175
200
1.E-04
Tim e (s)
400
350
300
250
200
150
100
50
0
1.E-03
Figure 4. Capacitance vs. Reverse Voltage
1
1.E-02
10
1.E-01
100
1.E+00
1000