CSD10060G Cree Inc, CSD10060G Datasheet - Page 2

• Manufacturer Part Number: CSD10060G
• Description: DIODE SCHOTTKY 600V 10A TO263-2
• Manufacturer: Cree Inc

Specifications of CSD10060G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.8V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 16.5A
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 550pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Termination Type: SMD
• Junction Temperature, Tj Max: 175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1.
Typical Performance
Electrical Characteristics
Thermal Characteristics
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
0
V
20
18
16
14
12
10
I
C
θJC
R
8
6
4
2
0
F
C
CSD10060 Rev. S
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
Thermal Resistance from Junction to Case
Figure 1. Forward Characteristics
1.0 2.0 3.0 4.0
Typ.
100
550
1.5
2.0
50
28
65
50
Typ.
1.1
Max.
1000
200
1.8
2.4
200
180
160
140
120
100
°C/W
0
Unit
Unit
80
60
40
20
μA
nC
pF
0
V
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
V
100 200 300 400 500 600 700
F
F
Figure 2. Reverse Characteristics
J
R
R
R
R
R
R
= 10 A T
= 10 A T
= 25°C
= 600 V, I
= 0 V, T
= 200 V, T
= 400 V, T
= 600 V T
= 600 V T
Test Conditions
J
= 25°C, f = 1 MHz
J
J
=25°C
=175°C
F
J
J
J
J
= 10 A
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
=25°C
=150°C
Note