1N914B,113 NXP Semiconductors, 1N914B,113 Datasheet - Page 3

• Manufacturer Part Number: 1N914B,113
• Description: DIODE SW HS 100V 225MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of 1N914B,113

• Voltage - Forward (vf) (max) @ If: 720mV @ 5mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 75mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 8ns
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Lead Free Status / RoHS Status: Not applicable / Not applicable
• Other names: 1N914B T/R; 568-1365-2; 933029610113

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
2003 Jun 06
V
I
C
t
V
R
R
SYMBOL
SYMBOL
j
R
rr
F
fr
= 25 C; unless otherwise specified.
d
th j-tp
th j-a
High-speed diodes
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
1N914; 1N914A
1N914B
1N914B
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
when switched from I
I
I
when switched from I
t
R
R
R
R
r
= 20 ns; see Fig.8
I
I
I
V
V
V
= 10 mA; R
= 1 mA; see Fig.7
= 60 mA; R
= 1 mA; see Fig.7
F
F
F
R
R
R
= 10 mA
= 5 mA
= 100 mA
= 20 V
= 75 V
= 20 V; T
R
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
3
L
L
= 0; see Fig.6
j
= 100 ; measured at
= 100 ; measured at
= 150 C
F
F
F
= 10 mA to
= 10 mA to
= 50 mA;
CONDITIONS
1N914; 1N914A; 1N914B
0.62
MIN.
1
0.72
1
25
5
50
4
8
4
2.5
Product specification
VALUE
MAX.
240
500
V
V
V
nA
pF
ns
ns
V
A
A
UNIT
UNIT
K/W
K/W