MBRS190TR Vishay, MBRS190TR Datasheet - Page 2

• Manufacturer Part Number: MBRS190TR
• Description: DIODE SCHOTTKY 90V 1A SMB
• Manufacturer: Vishay

Specifications of MBRS190TR

• Voltage - Forward (vf) (max) @ If: 780mV @ 1A
• Voltage - Dc Reverse (vr) (max): 90V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 90V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 90 V
• Forward Continuous Current: 1 A
• Max Surge Current: 870 A
• Configuration: Single
• Forward Voltage Drop: 0.78 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: VS-MBRS190TR; VS-MBRS190TR; VSMBRS190TR; VSMBRS190TR

MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. E 07/04
Thermal-Mechanical Specifications
2
Voltage Ratings
Absolute Maximum Ratings
Electrical Specifications
T
T
R
R
wt
(**) Mounted 1 inch square PCB
V
I
C
L
dv/dt Max. Volatge Rate of Charge
(1) Pulse Width < 300µs, Duty Cycle < 2%
(*) dPtot
I
I
E
I
V
V
RM
F(AV)
FSM
AR
S
J
stg
FM
thJL
thJA
T
AS
R
RWM
dTj
Max. Junction Temperature Range (*) - 55 to 175
Max. Storage Temperature Range
Max. Thermal Resistance
Junction to Lead
Max. Thermal Resistance
Junction to Ambient
Approximate Weight
Case Style
Device Marking
Parameters
Parameters
Parameters
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current (1)
* See Fig. 2
Typical Junction Capacitance
Typical Series Inductance
(Rated V
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Non- Repetitive Avalanche Energy
Repetitive Avalanche Current
<
Rth( j-a)
1
R
)
thermal runaway condition for a diode on its own heatsink
(1)
(**)
0.10 (0.003) g (oz.)
- 55 to 175
Value
Value
10000
Value
0.78
0.62
IR19-IR10
0.5
1.0
2.0
870
42
1.0
1.0
0.5
36
80
50
SMB
Units
Units
°C/W DC operation (See Fig. 4)
°C/W DC operation
Units Conditions
V/ µs
mA
mA
mJ
pF
nH
°C
°C
V
V
A
A
A
Similar to DO-214AA
@ 1A
@ 1A
T
T
V
Measured lead to lead 5mm from package body
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 µsec
Frequency limited by T
MBRS190TR
J
J
R
J
= 25 °C
= 125 °C
= 25 °C, I
= 5V
90
DC
, (test signal range 100kHz to 1MHz) 25°C
AS
Conditions
Conditions
= 0.5A, L = 8mH
T
T
V
J
J
R
= 25 °C
= 125 °C
= rated V
L
= 147 °C, rectangular wave form
J
max. Va = 1.5 x Vr typical
R
MBRS1100TR
Following any rated
load condition and
with rated V
100
www.irf.com
RRM
applied