MBRS190TR Vishay, MBRS190TR Datasheet

DIODE SCHOTTKY 90V 1A SMB

MBRS190TR

Manufacturer Part Number
MBRS190TR
Description
DIODE SCHOTTKY 90V 1A SMB
Manufacturer
Vishay
Datasheets

Specifications of MBRS190TR

Voltage - Forward (vf) (max) @ If
780mV @ 1A
Voltage - Dc Reverse (vr) (max)
90V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 90V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Diodes
Peak Reverse Voltage
90 V
Forward Continuous Current
1 A
Max Surge Current
870 A
Configuration
Single
Forward Voltage Drop
0.78 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
VS-MBRS190TR
VS-MBRS190TR
VSMBRS190TR
VSMBRS190TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRS190TR
Manufacturer:
IR
Quantity:
45 000
Part Number:
MBRS190TRPBF
Manufacturer:
IR
Quantity:
45 000
Document Number: 94315
Revision: 05-Jul-10
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
F(AV)
FSM
J
RRM
F
Diode variation
SMB
Package
T
V
J
I
F
E
F(AV)
I
V
max.
RM
at I
AS
R
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Rectangular waveform
t
1.0 Apk, T
Range
p
= 5 μs sine
DO-214AA (SMB)
Cathode
CHARACTERISTICS
1 mA at 125 °C
SYMBOL
J
= 125 °C
90 V, 100 V
I
Single die
Schottky Rectifier, 1.0 A
I
E
F(AV)
FSM
I
AR
175 °C
1.0 mJ
0.78 V
AS
1 A
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Anode
SYMBOL
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
Current decaying linearly to zero in 1 μs
Frequency limited by T
V
J
RWM
V
= 25 °C, I
R
AS
= 0.5 A, L = 8 mH
VS-MBRS190TRPbF
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface
mount Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
L
TEST CONDITIONS
term reliability
260 °C
= 147 °C, rectangular waveform
J
maximum V
90
DiodesEurope@vishay.com
A
- 55 to 175
VALUES
= 1.5 x V
Following any rated load
condition and with rated
V
90/100
RRM
0.63
870
1.0
VS-MBRS1100TRPbF
applied
Vishay Semiconductors
R
typical
100
VALUES
870
1.0
1.0
0.5
50
www.vishay.com
UNITS
UNITS
°C
A
A
V
V
V
UNITS
mJ
A
A
1

Related parts for MBRS190TR

MBRS190TR Summary of contents

Page 1

... Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface 1 A mount Schottky rectifier has been designed for applications 90 V, 100 V requiring low forward drop and very small foot prints on PC ...

Page 2

... VS-MBRS190TRPbF, VS-MBRS1100TRPbF Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop See fig. 1 Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage ...

Page 3

... Fig Maximum Forward Voltage Drop Characteristics 100 10 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 Fig Maximum Thermal Impedance Z Document Number: 94315 For technical questions within your region, please contact one of the following: Revision: 05-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-MBRS190TRPbF, VS-MBRS1100TRPbF Schottky Rectifier, 1.0 A 0.8 1 ° Reverse Voltage (V) R Fig ...

Page 4

... VS-MBRS190TRPbF, VS-MBRS1100TRPbF Vishay Semiconductors DC Square wave (D = 0.50) Rated V applied R See note (1) 0 0.4 0 Average Forward Current (A) F(AV) Fig Maximum Average Forward Current vs. Allowable Lead Temperature Fig Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used ( REV Pd = Forward power loss = F(AV) ...

Page 5

... ORDERING INFORMATION TABLE Device code Dimensions Part marking information Packaging information Document Number: 94315 For technical questions within your region, please contact one of the following: Revision: 05-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-MBRS190TRPbF, VS-MBRS1100TRPbF Schottky Rectifier, 1.0 A VS- MBR S 1 100 Vishay Semiconductors product suffix ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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