IDB10S60C Infineon Technologies, IDB10S60C Datasheet - Page 5

• Manufacturer Part Number: IDB10S60C
• Description: DIODE SCHOTTKY 600V 10A D2PAK
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDB10S60C

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.7V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 140µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 480pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 10 A
• Max Surge Current: 76 A
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 140 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 24.0 nC
• Package: D2PAK (TO-263)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000411540

Rev. 2.0
9 Typ. C stored energy
E
C
=f(V
14
12
10
8
6
4
2
0
R
)
0
100
200
V
300
R
[V]
400
500
600
page 5
10 Typ. Capacitive charge vs. current slope
Q
C
=f(di
25
20
15
10
5
0
100
F
/dt )
5)
; T
j
=150 °C; I
400
di
F
/dt [A/µs]
F
≤I
F,max
700
IDB10S60C
2008-03-26
1000