IDV03S60C Infineon Technologies, IDV03S60C Datasheet

no-image

IDV03S60C

Manufacturer Part Number
IDV03S60C
Description
DIODE SCHOTTKY 600V 3A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDV03S60C

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
1.9V @ 3A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
3A (DC)
Current - Reverse Leakage @ Vr
30µA @ 600V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
90pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
3A
Forward Voltage Vf Max
1.9V
Reverse Recovery Time Trr Max
10ns
Forward Surge Current Ifsm Max
16A
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
3.0 A
Qc (typ)
5.0 nC
Package
TO-220 FullPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
 Details
Other names
IDT03S60C
IDT03S60C
SP000274985
SP000732198

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDV03S60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
S i C
Silicon Carbide Diode
2 n d G e n e r a t i o n t h i n Q ! ™
2nd Generation thinQ!™ SiC Schottky Diode
IDV03S60C
D a t a S h e e t
Rev. 2.1, 2010-02-16
Final
I n d u s t r i a l & M u l t i m a r k e t

Related parts for IDV03S60C

IDV03S60C Summary of contents

Page 1

... Silicon Carbide Diode ™ 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Rev. 2.1, 2010-02-16 Final & ...

Page 2

... Value 600 < 120° Table 2 Pin Definition Pin 1 Pin2 C A Type / Ordering Code Package IDV03S60C PG-TO220 FullPAK 1) J-STD20 and JESD22 Final Data Sheet 1) for target applications Unit Pin 3 n.a. Marking D03S60C 2 IDV03S60C Related Links IFX SiC Diodes Webpage Rev. 2.1, 2010-02-16 ...

Page 3

... Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode 3 IDV03S60C Table of Contents Rev. 2.1, 2010-02-16 ...

Page 4

... V RRM dv/ tot ; 175 T j stg - - 50 Symbol Values Min. Typ thJC - - R thJA - - T sold 4 IDV03S60C Maximum ratings Unit Note / Test Condition A = < 120° 25° 150° 25° µ A²s = 25° 150° 25° V/ns = 0...480 ° °C Ncm M2.5 screws ...

Page 5

... Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode Symbol Values Min. Typ. 600 - 1 2 1.3 Symbol Values Min. Typ IDV03S60C Electrical characteristics Unit Note / Test Condition Max ° ° 2 150 ° µA = 600 V, =25 ° 300 = 600 V, =150 ° ...

Page 6

... P T tot C Table 8 Typ. forward characteristic =f =400 µs; parameter Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode Diode forward current I =f Typ. forward characteristic in surge current =f IDV03S60C Electrical characteristics diagrams ≤ 175 °C j =400 µs; parameter Rev. 2.1, 2010-02-16 ...

Page 7

... Table 10 Typ. transient thermal impedance ; =f(tp) parameter thjc P Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode 1) Typ. reverse current vs. reverse voltage I =f max R R Typ. capacitance vs. reverse voltage ); T C=f IDV03S60C Electrical characteristics diagrams =25 °C, f=1 MHz C Rev. 2.1, 2010-02-16 ...

Page 8

... Table 11 Typ. C stored energy =f Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode Electrical characteristics diagrams 8 IDV03S60C Rev. 2.1, 2010-02-16 ...

Page 9

... Package outlines Figure 1 Outlines TO-220 FullPAK, dimensions in mm/inches Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode 9 IDV03S60C Package outlines Rev. 2.1, 2010-02-16 ...

Page 10

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 2nd Generation thinQ!™ SiC Schottky Diode erratum@infineon.com 10 IDV03S60C Revision History Rev. 2.1, 2010-02-16 ...

Related keywords