IDD03SG60C Infineon Technologies, IDD03SG60C Datasheet - Page 4

• Manufacturer Part Number: IDD03SG60C
• Description: DIODE SCHOTTKY 600V 3A TO252-3
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDD03SG60C

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 2.3V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 3 A
• Max Surge Current: 11.5 A
• Configuration: Single
• Forward Voltage Drop: 2.3 V
• Maximum Reverse Leakage Current: 15 uA
• Maximum Power Dissipation: 38 W
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 3.0 A
• Qc (typ): 3.2 nC
• Package: DPAK (TO-252)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDD03SG60C; IDD03SG60CTR; SP000411542; SP000786802

Rev. 2.0
5 Typ. capacitance charge vs. current slope
Q
7 Typ. transient thermal impedance
Z
thJC
C
=f(di
=f(t
3.5
2.5
1.5
0.5
10
10
10
10
3
2
1
0
100
-1
-2
F
1
0
p
10
/dt )
); parameter: D = t
-6
0.5
0.2
0.1
0.05
0.02
0.01
0
6)
; I
F
10
≤I
-5
F,max
400
di
10
F
/d t [A/µs]
-4
P
t
/T
P
[s]
10
700
-3
10
-2
1000
10
page 4
-1
6 Typ. reverse current vs. reverse voltage
I
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
10
10
10
10
10
10
-10
80
70
60
50
40
30
20
10
-5
-6
-7
-8
-9
0
100
R
10
R
); parameter: T
); T
-1
C
=25 °C, f =1 MHz
200
10
0
100 °C
-55 °C
175 °C
150 °C
25 °C
j
300
V
V
R
R
10
[V]
[V]
1
400
IDD03SG60C
10
500
2
2010-03-19
600
10
3