IDB15E60 Infineon Technologies, IDB15E60 Datasheet - Page 5

• Manufacturer Part Number: IDB15E60
• Description: DIODE 600V 29.2A TO263-3
• Manufacturer: Infineon Technologies

Specifications of IDB15E60

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 2V @ 15A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 29.2A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 87ns
• Mounting Type: Surface Mount
• Product: Power Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 15 A
• Max Surge Current: 60 A
• Configuration: Single
• Recovery Time: 87 ns
• Forward Voltage Drop: 2 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 83.3 W
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Packages: PG-TO263-3
• If (typ): 15.0 A
• If (max): 29.2 A
• If,sm (max): 60.0 A
• Vf (typ): 1.5 V
• Ir (max): 50.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDB15E60XT

Rev.2.2
5 Typ. reverse recovery time
t
parameter: V
7 Typ. reverse recovery current
I
parameter: V
rr
rr
= f (di
= f (di
ns
A
500
400
350
300
250
200
150
100
50
18
16
15
14
13
12
11
10
0
200
9
8
7
6
5
4
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 400V, T
= 400V, T
30A
15A
7.5A
500
500
600
600
j
j
= 125°C
= 125°C
700
700
800
800
30A
15A
7.5A
A/µs
A/µs
di
di
F
F
1000
1000
/dt
/dt
Page 5
6 Typ. reverse recovery charge
Q
parameter: V
8 Typ. reverse recovery softness factor
S = f(di
parameter: V
rr
nC
=f(di
1450
1250
1150
1050
950
850
750
650
550
11
200
9
8
7
6
5
4
3
200
F
F
/dt)
/dt)
300
300
R
R
30A
15A
7.5A
400
400
= 400V, T
= 400V, T
500
500
600
600
j
j
7,5A
30A
15A
= 125 °C
= 125°C
700
700
2007-09-01
IDB15E60
800
800
A/µs
A/µs
di
di
F
F
/dt
1000
1000
/dt