CMH07(TE12L,Q) Toshiba, CMH07(TE12L,Q) Datasheet

CMH07(TE12L,Q)

Manufacturer Part Number

CMH07(TE12L,Q)

Description

DIODE HI EFF 200V 2A M-FLAT

Manufacturer

Toshiba

Datasheet

1.CMH07TE12LQ.pdf (5 pages)

Specifications of CMH07(TE12L,Q)

Voltage - Forward (vf) (max) @ If

980mV @ 2A

Voltage - Dc Reverse (vr) (max)

200V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

10µA @ 200V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Mounting Type

Surface Mount

Package / Case

3-4E1A (M-Flat)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

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Switching Mode Power Supply Applications

•

Maximum Ratings

Electrical Characteristics

Repetitive peak reverse voltage: V

Average forward current: I

Low forward voltage: V

Very Fast Reverse-Recovery Time: trr = 35 ns (Max)

Suitable for compact assembly due to small surface-mount package

Repetitiv e peak reverse voltage

Average forward current

Peak one cycle surge forward current

(non-repetitive)

Junction temperature

Storage temperature range

Peak forward voltage

Peak repetitive reverse current

Reverse recovery time

Forward recovery time

Thermal resistance

(junction to ambient)

Thermal resistance

(junction to lead)

Note:

“M−FLAT

Characteristics

Ta＝35°C

board size: 50 mm × 50 mm

soldering land: 2mm ×2mm

Device mounted on a ceramic board

glass-epoxy board thickness 0.64t

” (Toshiba package name)

(Ta = 25°C)

TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type

= 0.98 V

F (AV)

= 2.0 A

(Ta = 25°C)

RRM

Symbol

FM (1)

FM (2)

FM (3)

th (j-a)

RRM

th (j-ℓ)

Symbol

F (AV)

FSM

RRM

= 200 V

stg

CMH07

Device mounted on a ceramic board

(board size: 50 mm × 50 mm)

(soldering land: 2 mm × 2 mm)

(board thickness: 0.64 t)

Device mounted on a glass-epoxy board

(board size: 50 mm × 50 mm)

(soldering land: 6 mm × 6 mm)

(board thickness: 1.6 t)

Device mounted on a glass-epoxy board

(board size: 50 mm × 50 mm)

(soldering land: 2.1 mm × 1.4 mm)

(board thickness: 1.6 t)

RRM

= 1 A, di/dt = −30 A/µs

= 1 A

= 0.1 A (pulse test)

= 1.0 A (pulse test)

= 2.0 A (pulse test)

40 (50 Hz)

2.0(Note)

−40~150

= 200 V (pulse test)

Rating

200

Test Condition

⎯

Unit

°C

Weight: 0.023 g (typ.)

JEDEC

JEITA

TOSHIBA

Min

⎯

Typ.

0.68

0.83

0.91

⎯

3-4E1A

2004-07-01

―

Max

0.98

100

135

210

⎯

CMH07

Unit: mm

°C/W

Unit

µA

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CMH07(TE12L,Q) Summary of contents

Page 1

... TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type Switching Mode Power Supply Applications • Repetitive peak reverse voltage: V RRM • Average forward current 2 (AV) • Low forward voltage 0. • Very Fast Reverse-Recovery Time: trr = 35 ns (Max) • Suitable for compact assembly due to small surface-mount package TM “ ...

Page 2

Marking Abbreviation Code Part No. H7 CMH07 Standard Soldering Pad 1.4 3.0 Handling Precaution The maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are ...

Page 3

F F 100 Pulse test 10 150°C 75° 25°C 1 0.1 0.01 0.2 0.6 0.8 1.0 1.2 1.4 0.4 Instantaneous forward voltage v F (V) Ta max – (AV) 160 Device mounted ...

Page 4

C – V (Typ 100 Ta = 25° MHz Reverse voltage V R (V) Surge forward current (non-repetitive 100 Number ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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