CUS02(TE85L,Q) Toshiba, CUS02(TE85L,Q) Datasheet - Page 4

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CUS02(TE85L,Q)

Manufacturer Part Number
CUS02(TE85L,Q)
Description
DIODE SCHOTTKY 1A 30V US-FLAT
Manufacturer
Toshiba
Datasheet

Specifications of CUS02(TE85L,Q)

Voltage - Forward (vf) (max) @ If
470mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
100µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
*
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
20 A
Configuration
Single
Forward Voltage Drop
0.45 V at 0.7 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CUS02(TE85L,Q)
Manufacturer:
SEK
Quantity:
3 000
Part Number:
CUS02(TE85L,Q)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
0.0001
0.001
0.01
100
0.1
24
20
16
12
10
8
4
0
1
1
0
Pulse test
Surge forward current (non-repetitive)
20
Junction temperature T
40
15 V
Number of cycles
60
20 V
I
R
10
80
– T
3 V
j
V R = 30 V
100
5 V
j
120
(°C)
10 V
Ta = 25°C
f = 50 Hz
140
(typ.)
100
160
4
1000
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
0
Rectangular
Conduction
T j = 150°C
waveform
angle: α
α
360°
Reverse voltage V
Reverse voltage V
60°
10
P
R (AV)
120°
C
10
j
– V
– V
180°
R
R
R
R
20
240°
(V)
(V)
300°
f = 1 MHz
Ta = 25°C
(typ.)
(typ.)
2008-05-13
DC
100
30
CUS02

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