DSEP12-12A IXYS, DSEP12-12A Datasheet

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DSEP12-12A

Manufacturer Part Number
DSEP12-12A
Description
DIODE 1200V 15A TO220AC
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet

Specifications of DSEP12-12A

Voltage - Forward (vf) (max) @ If
2.75V @ 15A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
15A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
40ns
Mounting Type
Through Hole
Package / Case
TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
2.75 V
Recovery Time
40 ns (Typ)
Forward Continuous Current
15 A
Max Surge Current
90 A
Reverse Current Ir
100 uA
Power Dissipation
95 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
15
Ifavm, D = 0.5, Per Diode, (a)
15
@ Tc, (°c)
125
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj=45°c, (a)
90
Vf, Max, Tvj =150°c, (v)
1.79
@ If, (a)
15
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
4.5
@ -di/dt, (a/µs)
100
Tvjm, (°c)
175
Rthjc, Max, (k/w)
1.60
Package Style
TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
Q1530139

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HiPerFRED
with soft recovery
1200
Symbol
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
V
FRMS
FAVM
FSM
AR
R
RM
rr
VJ
VJM
stg
tot
F
AS
thJC
thCH
RSM
V
d
1200
V
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 ms, Duty Cycle < 2.0 %
RRM
V
Conditions
T
T
T
I
V
T
mounting torque
typical
Conditions
T
T
I
I
V
V
T
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 15 A;
= 1 A; -di/dt = 100 A/ms;
= 125°C; rectangular, d = 0.5
= 9 A; L = 180 µH
= 1.25·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
TM
Type
DSEP 12-12A
R
p
VJ
typ.; f = 10 kHz; repetitive
T
T
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 25 A; -di
Epitaxial Diode
= V
= V
= 150°C
= 25°C
RRM
RRM
F
/dt = 100 A/ms
typ.
0.5
40
4.5
Characteristic Values
-55...+175
-55...+150
0.4...0.6
Maximum Ratings
175
8.7
0.9
A
15
max.
35
90
95
1.79
2.75
100
2
0.5
1.6
K/W
K/W
Nm
mA
mJ
°C
°C
°C
mA
ns
W
A
A
A
A
V
V
A
g
C
I
V
t
TO-220 AC
A = Anode, C = Cathode, TAB = Cathode
Features
Applications
Advantages
Dimensions see outlines.pdf
FAV
rr
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
C
RM
RM
= 15 A
= 1200 V
= 40 ns
A
-values
reduces:
DSEP 12-12A
C (TAB)
1 - 2

Related parts for DSEP12-12A

DSEP12-12A Summary of contents

Page 1

... Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved A Maximum Ratings ...

Page 2

... T VJ Fig. 4 Dynamic parameters versus K thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 7 Transient thermal resistance junction to case NOTE: Fig Fig. 6 shows typical values © 2000 IXYS All rights reserved 3 100° 600V 30A 15A ...

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