DSEP12-12B IXYS, DSEP12-12B Datasheet
DSEP12-12B
Manufacturer Part Number
DSEP12-12B
Description
DIODE HFRED 1200V 15A TO-220AC
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEP12-12B.pdf
(2 pages)
Specifications of DSEP12-12B
Voltage - Forward (vf) (max) @ If
3.25V @ 15A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
15A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Through Hole
Package / Case
TO-220AC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.25 V
Recovery Time
35 ns
Forward Continuous Current
15 A
Max Surge Current
90 A
Reverse Current Ir
100 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
15
Ifavm, D = 0.5, Per Diode, (a)
15
@ Tc, (°c)
120
Ifrms, (a)
35
Ifsm, 10 Ms, Tvj=45°c, (a)
90
Vf, Max, Tvj =150°c, (v)
2.20
@ If, (a)
15
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =100°c, (a)
3.7
@ -di/dt, (a/µs)
100
Tvjm, (°c)
175
Rthjc, Max, (k/w)
1.60
Package Style
TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEP12-12B
Manufacturer:
IXYS
Quantity:
12 500
HiPerFRED
with soft recovery
Pulse test:
Data according to IEC 60747 and per diode
unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
Symbol
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
FRMS
FAVM
FSM
AR
R
RM
200
rr
V
VJ
VJM
stg
AS
tot
F
thJC
thCH
d
RSM
V
‚
200
V
Pulse Width =
‚ Pulse Width = 300 µs, Duty Cycle < 2.0%
RRM
V
Conditions
T
T
T
I
V
T
mounting torque
typical
Conditions
V
V
I
I
-di/dt = 00 A/µs
I
-di
AS
F
F
F
C
VJ
VJ
A
C
R
R
= 5 A
= A; V
= 25 A; V
F
= .25·V
= 20°C; rectangular, d = 0.5
= 25°C
= 9 A; L = 80 µH
= V
= V
/dt = 00 A/µs
= 45°C; tp = 0 ms (50 Hz), sine
= 25°C; non-repetitive
Type
DSEP 2-2B
RRM
RRM
R
R
R
= 30 V;
TM
= 00 V;
typ.; f = 0 kHz; repetitive
5 ms, Duty Cycle < 2.0%
Epitaxial Diode
T
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
VJ
G
= 25°C
= 50°C
= 50°C
= 25°C
= 25°C
= 25°C
C
K
Characteristic Values
J
Maximum Ratings
A
typ.
0.5
3.7
35
-55...+75
-55...+50
0.4...0.6
max.
Q
N
2.20
3.25
75
00
8.7
0.9
0.5
.6
35
5
90
95
M
2
L
K/W
K/W
Nm
mA
mJ
µA
°C
°C
°C
C
ns
W
A
A
A
A
V
V
A
g
I
V
t
TO-220 AC
A = Anode, C = Cathode, TAB = Cathode
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
• Soft reverse recovery for low EMI/RFI
• Low I
FAV
rr
switching devices
and motor control circuits
supplies (SMPS)
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
RRM
C
A
RM
RM
=
= 1200 V
=
-values
reduces:
DSEP12-12B
15 A
35 ns
2008046a
C (TAB)
- 2
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DSEP12-12B Summary of contents
Page 1
... V VJ .6 K/W 0.5 K 25° 25°C 3 DSEP12-12B FAV V = 1200 V RRM TO-220 (TAB Anode Cathode, TAB = Cathode Features • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low I -values RM • Soft recovery behaviour • ...
Page 2
... F Fig. 5 Typ. recovery time t versus -di / 2.0 1.6 1.2 0.8 0.4 0 Fig. 8 Transient thermal resistance junction to case DSEP12-12B 7 250 375 500 625 750 1000 1250 1500 875 1125 1375 -di /dt [ Fig. 3 Typ. peak reverse current ...