STTH2002G-TR STMicroelectronics, STTH2002G-TR Datasheet - Page 4

• Manufacturer Part Number: STTH2002G-TR
• Description: DIODE ULT FAST 200V 20A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH2002G-TR

• Voltage - Forward (vf) (max) @ If: 1.1V @ 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 20A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-5761-2

Characteristics
4/10
Figure 5.
Figure 7.
Figure 9.
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
100
0
10
10
25
1
V
I
R
F
= 160 V
=20 A
Junction capacitance versus
reverse applied voltage (typical
values)
Reverse recovery time versus
dI
Dynamic parameters versus
junction temperature
50
F
/dt (typical values)
I
RM
10
Q
RR
75
V
100
R
dI
(V)
T
F
/dt(A/µs)
j
T
(°C)
T
j
j
= 25 °C
= 125 °C
100
100
125
V
osc
F=1MHz
T
V
=30mV
I
j
R
=25°C
F
=20A
=160V
RMS
1000
1000
150
Figure 6.
Figure 8.
Figure 10. Thermal resistance, junction to
80
70
60
50
40
30
20
10
400
350
300
250
200
150
100
20
18
16
14
12
10
0
50
8
6
4
2
0
0
0
10
10
V
I
R
F
V
= 160 V
= 20 A
I
R
F
= 160 V
= 20 A
5
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
ambient, versus copper surface
under tab (Epoxy printed circuit
board FR4, e
F
/dt (typical values)
10
15
F
/dt (typical values)
S
CU
100
(cm²)
100
20
cu
T
j
=125 °C
= 35 µm) for D
T
j
T
=125 °C
25
j
=25 °C
30
dI
dI
F
/dt(A/µs)
F
/dt(A/µs)
T
j
=25 °C
35
STTH2002
D²PAK
1000
1000
2
40
PAK