STTH806D STMicroelectronics, STTH806D Datasheet - Page 4

• Manufacturer Part Number: STTH806D
• Description: DIODE ULT FAST 600V 8A TO-220AC
• Manufacturer: STMicroelectronics

Specifications of STTH806D

• Voltage - Forward (vf) (max) @ If: 1.85V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 8µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
14
12
10
100
8
6
4
2
0
10
1
0
V
1
C(pF)
S factor
0
FP
(V)
I =I
T =125°C
F
j
50
F(AV)
Softness factor versus
dI
Transient peak forward voltage
versus dI
reverse voltage applied
(typical values)
100
100
F
/dt (typical values)
150
10
200
200
dI /dt(A/µs)
dI /dt(A/µs)
F
F
F
V (V)
/dt (typical values)
R
250
300
300
100
350
400
V
400
OSC
F=1MHz
T =25°C
=30mV
j
I
V = 400 V
T = 125° C
F
R
j
≤
450
2 x I
RMS
F(AV)
1000
500
500
Figure 8.
Figure 10. Forward recovery time versus
Figure 12. Thermal resistance junction to
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
200
180
160
140
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0
R
25
0
t (ns)
fr
th(j-a)
5
(°C/W)
Relative variations of dynamic
parameters versus junction
temperature
dI
ambient versus copper surface
under tab (printed circuit board
FR4, e
100
F
10
/dt (typical values)
50
CU
I
RM
15
200
S
dI /dt(A/µs)
S factor
= 35 µm)
(Cu)
F
T (°C)
j
(cm²)
20
75
300
25
Q
RR
100
30
Reference: T =125°C
V =1.1 x V max.
400
FR
T =125°C
I =I
V =400V
F
j
I =I
F
R
F(AV)
35
F(AV)
D ² PAK
STTH806
F
j
500
125
40