STTH803G-TR STMicroelectronics, STTH803G-TR Datasheet - Page 2

• Manufacturer Part Number: STTH803G-TR
• Description: DIODE FAST REC 300V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH803G-TR

• Voltage - Forward (vf) (max) @ If: 1.25V @ 8A
• Voltage - Dc Reverse (vr) (max): 300V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 35 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 20 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4417-2

STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 5 ms, < 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
STTH803D/G
THERMAL RESISTANCES
RECOVERY CHARACTERISTICS
2/6
Symbol
Symbol
Symbol
R
S
V
th (j-c)
I
V
I
factor
R
F
trr
tfr
RM
FP
**
*
F(AV)
Junction to case
** tp = 380 s, < 2%
Reverse leakage
current
Forward voltage drop
I
I
I
V
Vcc = 200V
F
F
F
dI
FR
= 0.5 A
= 1 A
= 8 A
F
/dt = 200 A/ s
+ 0.031 I
= 1.1 x V
Parameter
dI
dI
F
F
2
F
F
(RMS)
Irr = 0.25 A
max.
/dt = - 50 A/ s
/dt = 100 A/ s
Tests conditions
I
F
= 8 A
V
I
I
Parameter
F
F
R
= 8 A
= 8 A
= 300 V
Tests conditions
I
R
V
= 1 A
R
= 30 V
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 25 C
Tj = 25 C
Tj = 25 C
Tj = 125°C
Min.
Min.
Typ.
Typ.
0.85
0.3
20
Value
2.5
Max.
Max.
1.25
200
200
3.5
20
25
35
1
8
Unit
Unit
Unit
C/W
ns
ns
V
V
A
-
A