STPS1045B STMicroelectronics, STPS1045B Datasheet - Page 2

• Manufacturer Part Number: STPS1045B
• Description: DIODE SCHOTTKY 10A 45V DPAK
• Manufacturer: STMicroelectronics

Specifications of STPS1045B

• Voltage - Forward (vf) (max) @ If: 630mV @ 10A
• Voltage - Dc Reverse (vr) (max): 45V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

Characteristics
1
2/7
Characteristics
Table 2.
1.
Table 3.
Table 4.
1. Pulse test: tp = 5 ms,
2. Pulse test: tp = 380 µs,
To evaluate the conduction losses use the following equation:
P = 0.42 x I
Symbol
Symbol
Symbol
I
F(RMS)
R
V
P
dV/dt
I
I
V
I
F(AV)
I
T
RRM
FSM
pin
th(j-c)
R
RRM
ARM
F
T
dPtot
stg
dTj
(1)
(2)
j
/
<
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Junction to case
Reverse leakage
current
Forward voltage drop
Rth(j-a)
F(AV)
1
Absolute maximum ratings
Thermal parameters
Static electrical characteristics
Parameter
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.015 I
δ
δ
< 2%
< 2%
F
2
(RMS)
Doc ID 6085 Rev 6
T
T
T
T
T
T
j
j
j
j
j
j
Parameter
Parameter
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
V
I
I
F
F
(1)
R
T
t
t
t
= 10 A
= 20 A
p
p
p
= V
c
= 10 ms sinusoidal
= 2 µs F= 1 kHz
= 1 µs T
= 150 °C δ = 0.5
RRM
j =
Min.
25 °C
Typ.
0.50
0.65
7
- 65 to + 150
10000
Value
Value
4000
175
45
10
75
7
1
3
Max.
0.63
0.57
0.84
0.72
100
15
STPS1045B
°C/W
V/µs
Unit
Unit
Unit
mA
μA
°C
°C
W
V
A
A
A
A
V