STTH212U STMicroelectronics, STTH212U Datasheet - Page 4
![DIODE ULT FAST 1200V 2A SMB](/photos/5/36/53650/497-do-214aa_sml.jpg)
STTH212U
Manufacturer Part Number
STTH212U
Description
DIODE ULT FAST 1200V 2A SMB
Manufacturer
STMicroelectronics
Datasheet
1.STTH212S.pdf
(9 pages)
Specifications of STTH212U
Voltage - Forward (vf) (max) @ If
1.75V @ 2A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
10µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
1.75 V
Recovery Time
75 ns
Forward Continuous Current
2 A
Max Surge Current
40 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5762-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STTH212U
Manufacturer:
ST
Quantity:
50 000
Part Number:
STTH212U
Manufacturer:
VISHAY/威世
Quantity:
20 000
1 Electrical characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
900
800
700
600
500
400
300
200
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-01
0
t rr (ns)
Z th(j-a) /R th(j-a)
0
0
S
FACTOR
S
I F =0.5 x I F(AV)
V
T
Cu
I
25
j
SMC
50
F
R
=125° C
=1cm²
=I
=600V
F( AV)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S
Reverse recovery time versus dI
(typical values)
Softness factor versus dI
(typical values)
I F =2 x I F(AV)
100
50
CU
1.E+00
= 1cm
75
150
I F =I F(AV)
I F =I F(AV)
100
dl /dt(A/µs)
200
dl /dt(A/µs)
F
F
2
1.E+01
)
125
250
t p (s)
150
300
175
350
1.E+02
200
400
F
T j =125 °C
V R =600V
/dt
225
450
1.E+03
250
500
F
/dt
Figure 6.
Figure 8.
Figure 10. Relative variations of dynamic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
11
10
1400
1200
1000
9
8
7
6
5
4
3
2
1
0
800
600
400
200
25
I
RM
0
0
0
Q rr (nC)
(A)
V
T
j
R
=125° C
=600V
20
V
T
j
R
=125°C
50
=600V
S
Reverse recovery current versus
dI
Reverse recovery charges versus
dI
parameters versus junction
temperature
FAC TO R
I
R M
Q
40
F
F
100
R R
/dt (typical values)
/dt (typical values)
50
I
I
F
F
=0. 5 x I
=0. 5 x I
60
150
F( AV
F( AV
I
F
=2 x I
)
)
80
dl /dt(A/µs)
200
I
F
F
F( AV)
=I
I
F
F( AV)
=0. 5 x I
I
I
F
F
=I
=I
100
75
F( AV)
F( AV)
I
I
250
F
F
dl /dt(A/µs)
=2 x I
=2 x I
F( AV)
T j (°C)
F
F( AV)
F( AV)
120
300
140
350
100
R ef er ence:T
160
400
V
I
F
R
=I
=600V
STTH212
F( AV)
180
450
j
=125° C
500
200
125