STPS1045B-TR STMicroelectronics, STPS1045B-TR Datasheet - Page 3

• Manufacturer Part Number: STPS1045B-TR
• Description: DIODE SCHOTTKY 10A 45V DPAK
• Manufacturer: STMicroelectronics

Specifications of STPS1045B-TR

• Voltage - Forward (vf) (max) @ If: 630mV @ 10A
• Voltage - Dc Reverse (vr) (max): 45V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 497-6572-2; STPS1045B-TR

STPS1045B
Figure 1.
Figure 3.
Figure 5.
8
7
6
5
4
3
2
1
0
0.001
120
100
0.01
80
60
40
20
0
0.1
P
0
1
0.01
1E-3
F(AV)
P
I (A)
M
P
ARM
I
1
M
ARM p
(W)
(1µs)
(t )
2
δ
=0.5
t
0.1
Average forward power dissipation
versus average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
δ = 0.05
3
4
1E-2
δ = 0.1
1
5
t (µs)
I
p
F(AV)
δ = 0.2
6
t(s)
(A)
7
10
1E-1
8
δ = 0.5
9
100
δ
=tp/T
10
Doc ID 6085 Rev 6
T =150°C
T =100°C
T =50°C
C
δ = 1
C
T
11
C
1000
1E+0
tp
12
Figure 2.
Figure 4.
Figure 6.
10
12
1.2
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0.0
8
6
4
2
0
1
0
1E-4
0
25
I
P
F(AV)
Z
ARM
P
th(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
ARM
(A)
(25 °C)
25
/R
(T )
Single pulse
th(j-c)
j
R
50
th(j-a)
Average forward current versus
ambient temperature (
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
1E-3
=70°C/W
50
75
75
R
th(j-a)
T
t (s)
T (°C)
R
amb
p
1E-2
th(j-a)
j
=15°C/W
=R
(°C)
100
th(j-c)
100
125
Characteristics
1E-1
δ
: 0.5)
δ
125
=tp/T
150
T
tp
1E+0
175
150
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