STTH302S STMicroelectronics, STTH302S Datasheet - Page 3

• Manufacturer Part Number: STTH302S
• Description: DIODE ULT FAST 3A 200V SMC
• Manufacturer: STMicroelectronics

Specifications of STTH302S

• Voltage - Forward (vf) (max) @ If: 950mV @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.95 V
• Recovery Time: 35 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 3 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5230-2; STTH302S

Fig. 1: Average forward power dissipation versus
average forward current.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 3: Relative variation of thermal impedance
junction ambient versus pulse duration (Printed
circuit board epoxy FR4).
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1.E-01
0.0
1
Zth(j-a)/Rth(j-a)
P
C(pF)
F(AV)
= 0.5
= 0.2
= 0.1
Single pulse
(W)
0.5
1.E+00
1.0
= 0.05
10
1.5
= 0.1
I
1.E+01
F(AV)
tp(s)
V (V)
R
(A)
2.0
= 0.2
100
1.E+02
2.5
= 0.5
=tp/T
=tp/T
3.0
V
F=1MHz
osc
T
T
j
=25°C
=30mV
T
= 1
tp
1.E+03
tp
1000
3.5
Fig. 2: Average forward current versus ambient
temperature ( = 0.5)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4:
current.
100.0
Fig. 6: Reverse recovery time versus dI
confidence).
100
10.0
90
80
70
60
50
40
30
20
10
1.0
0.1
0
0
I
1
t
F(AV)
0.0
RR
I
FM
(ns)
(A)
(A)
0.2
25
(Typical values)
(Typical values)
Forward voltage drop versus forward
T
T
(Maximum values)
(Maximum values)
j
j
0.4
=125°C
=125°C
T
T
j
j
R
=125°C
=125°C
th(j-a)
S=1cm²
0.6
=75°C/W
50
10
R
0.8
th(j-a)
=R
th(j-l)
75
dI /dt(A/µs)
1.0
T
T
F
j
amb
=25°C
V
T
j
=125°C
(Maximum values)
FM
1.2
(°C)
(V)
T
j
=25°C
100
1.4
100
1.6
125
1.8
STTH302S
F
2.0
150
/dt (90%
V
R
I
F
=100V
=3A
2.2
1000
3/5
175
2.4