STPS2H100 STMicroelectronics, STPS2H100 Datasheet - Page 3
![DIODE SCHOTTKY 2A 100V DO-41](/photos/5/36/53643/497-do-41__axial_series_sml.jpg)
STPS2H100
Manufacturer Part Number
STPS2H100
Description
DIODE SCHOTTKY 2A 100V DO-41
Manufacturer
STMicroelectronics
Datasheet
1.STPS2H100RL.pdf
(7 pages)
Specifications of STPS2H100
Voltage - Forward (vf) (max) @ If
860mV @ 2A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPS2H100
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
STPS2H100A
Manufacturer:
STMicroelectronics
Quantity:
25 279
Company:
Part Number:
STPS2H100A
Manufacturer:
FUJITSU
Quantity:
4 927
Part Number:
STPS2H100A
Manufacturer:
ST
Quantity:
20 000
Part Number:
STPS2H100AY
Manufacturer:
ST
Quantity:
20 000
STPS2H100RL
Figure 1.
Figure 3.
Figure 5.
0.001
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
10
1.E-03
0.1
9
8
7
6
5
4
3
2
1
0
0.0
1
0.01
I (A)
P
M
P
F(AV)
P
ARM
I
M
ARM
0.2
(W)
(1 µs)
(t p )
δ
=0.5
t
0.4
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
0.1
0.6
1.E-02
δ = 0.05
0.8
1
1.0
I
t (µs)
F(AV)
p
t(s)
δ = 0.1
1.2
(A)
10
1.E-01
1.4
δ = 0.2
1.6
δ = 0.5
100
δ
=tp/T
1.8
δ = 1
T =125°C
T
T =25°C
T =75°C
a
Doc ID 9217 Rev 4
2.0
a
a
1.E+00
tp
1000
2.2
Figure 2.
Figure 4.
Figure 6.
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
0.8
0.6
0.4
0.2
1.E-02
1
0
0
I
25
Z
F(AV)
P
th(j-a)
δ = 0.5
δ = 0.2
Single pulse
ARM
δ = 0.1
P
δ
ARM
=tp/T
(A)
(25 °C)
/R
25
(T j )
th(j-a)
1.E-01
T
Average forward current versus
ambient temperature
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to ambient
versus pulse duration
50
tp
50
R
th(j-a)
R
th(j-a)
=100°C/W
1.E+00
=R
75
th(j-I)
75
T
amb
t (s)
T (°C)
p
j
(°C)
1.E+01
100
100
125
Characteristics
1.E+02
δ
=tp/T
125
150
T
tp
1.E+03
150
175
3/7