STPS3L40UF STMicroelectronics, STPS3L40UF Datasheet - Page 3

• Manufacturer Part Number: STPS3L40UF
• Description: DIODE SCHOTTKY 40V 3A SMB
• Manufacturer: STMicroelectronics

Specifications of STPS3L40UF

• Voltage - Forward (vf) (max) @ If: 500mV @ 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 497-8036-2; STPS3L40UF

STPS3L40
Figure 3.
Figure 5.
Figure 7.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
45
40
35
30
25
20
15
10
1.2
0.8
0.6
0.4
0.2
1.E-03
5
0
1
0
0
I (A)
I
25
M
F(AV)
P
P
ARM
I
M
ARM p
δ
=tp/T
(A)
(25°C)
(t )
δ
25
=0.5
t
T
Average forward current versus
ambient temperature (δ = 0.5)
SMB flat
Non repetitive surge peak forward
current versus overload duration
(maximum values) SMB flat
Normalized avalanche power
derating versus junction
temperature
R
50
th(j-a)
tp
=75°C/W
1.E-02
50
75
T
R
amb
T (°C)
th(j-a)
j
75
t(s)
=R
(°C)
th(j-l)
100
1.E-01
100
SMB flat
SMB flat
(non exposed pad)
125
125
T =125°C
T =25°C
T =75°C
L
L
L
1.E+00
150
150
Figure 4.
Figure 6.
Figure 8.
0.001
14
12
10
0.01
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
8
6
4
2
0
0.1
1.E-02
1
0.01
I (A)
M
Z
P
th(j-c)
P
Single pulse
ARM
SMC
I
M
ARM p
(1µs)
/R
(t )
δ
th(j-c)
=0.5
t
1.E-01
Non repetitive surge peak forward
current versus overload duration
(maximum values) SMC
Normalized avalanche power
derating versus pulse duration
Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMC
0.1
1.E-02
1.E+00
1
t (µs)
p
t (s)
p
t(s)
1.E+01
10
1.E-01
Characteristics
1.E+02
δ
100
=tp/T
T =125°C
T
T =25°C
T =75°C
a
a
a
SMC
tp
1.E+00
1.E+03
1000
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