STPS3L60Q STMicroelectronics, STPS3L60Q Datasheet - Page 4

• Manufacturer Part Number: STPS3L60Q
• Description: DIODE SCHOTTKY 3A 60V DO-15
• Manufacturer: STMicroelectronics

Specifications of STPS3L60Q

• Voltage - Forward (vf) (max) @ If: 620mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

Characteristics
4/11
Figure 3.
Figure 5.
Figure 7.
0.001
0.01
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
1.E-03
1
0.01
8
6
4
2
0
P
I
0
I (A)
F(AV)
P
M
ARM
I
ARM
M
(A)
Rth(j-a)=Rth(j-l)
(1 µs)
(t p )
δ
Rth(j-a)=100°C/W
=0.5
t
25
0.1
Average forward current versus
ambient temperature (
(DO-15)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values) (DO-201AD)
1.E-02
50
T
amb
1
t (µs)
p
(°C)
t(s)
75
10
1.E-01
100
δ
= 0.5)
100
125
Ta=100 °C
Ta=50 °C
Ta=25 °C
Doc ID 7505 Rev 6
1.E+00
150
1000
Figure 4.
Figure 6.
Figure 8.
1.2
0.8
0.6
0.4
0.2
11
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
1.E-03
9
8
7
6
5
4
3
2
1
0
25
P
I
0
I (A)
F(AV)
M
ARM
I
P
M
ARM
(A)
(25 °C)
(T j )
δ
=0.5
t
25
Average forward current versus
ambient temperature (
(SMBflat)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values) (DO-15)
50
1.E-02
50
Rth(j-a)=100°C/W
75
T
amb
T (°C)
t(s)
j
75
(°C)
100
1.E-01
100
Rth(j-a)=Rth(j-l)
δ
= 0.5)
125
125
STPS3L60
Ta=100 °C
Ta=50 °C
Ta=25 °C
1.E+00
150
150