STTH3R04S STMicroelectronics, STTH3R04S Datasheet

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STTH3R04S

Manufacturer Part Number
STTH3R04S
Description
DIODE ULT FAST 400V 3A SMC
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH3R04S

Voltage - Forward (vf) (max) @ If
1.5V @ 3A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-

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Features
Description
The STTH3R04 series uses ST's new 400 V
planar Pt doping technology. The STTH3R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
May 2008
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Rev 1
Table 1.
STTH3R04Q
STTH3R04U
T
V
t
V
I
rr (typ)
j (max)
F(AV)
F (typ)
RRM
Band indicates cathode side.
DO-15
SMB
Device summary
Ultrafast recovery diode
A
STTH3R04
K
STTH3R04S
DO-201AD
STTH3R04
SMC
175 °C
400 V
18 ns
0.9 V
3 A
www.st.com
1/10

Related parts for STTH3R04S

STTH3R04S Summary of contents

Page 1

... May 2008 Ultrafast recovery diode A DO-15 STTH3R04Q Band indicates cathode side. SMB STTH3R04U Table 1. Device summary I F(AV) V RRM T j (max (typ (typ) Rev 1 STTH3R04 K DO-201AD STTH3R04 SMC STTH3R04S 3 A 400 V 175 °C 0 1/10 www.st.com ...

Page 2

Characteristics 1 Characteristics Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol V Repetitive peak reverse voltage RRM Average forward current, δ = 0.5 I F(AV) I Surge non repetitive forward current t FSM T Storage ...

Page 3

STTH3R04 Table 5. Dynamic characteristics ( °C unless otherwise stated) Symbol Parameter t Reverse recovery time rr I Reverse recovery current RM t Forward recovery time fr V Forward recovery voltage FP Figure 1. Conduction losses versus average ...

Page 4

Characteristics Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration, SMB (epoxy FR4, copper thickness = 35 µm) 1.0 SMB 0.9 S =1cm² Cu 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse 0.0 1.E-01 ...

Page 5

STTH3R04 Figure 11. Relative variations of dynamic parameters versus junction temperature 1 =320 V R 1.2 1 0.8 0 0.4 0.2 T (° Figure 13. ...

Page 6

Package information Figure 17. Thermal resistance junction to ambient versus copper surface under each lead, SMB, SMC (epoxy FR4, copper thickness = 35 µm) 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) In order ...

Page 7

STTH3R04 Table 7. DO-15 dimensions C D Table 8. SMB dimensions Figure 18. Footprint, dimensions in mm (inches) C Ref Ref ...

Page 8

Package information Table 9. SMC dimensions Figure 19. Footprint, dimensions in mm (inches) 8/10 Ref 1.54 5.11 (0.061) (0.201) 8.19 (0.322) STTH3R04 ...

Page 9

... STTH3R04 3 Ordering information Table 10. Ordering information Order code STTH3R04 STTH3R04RL STTH3R04Q STTH3R04QRL STTH3R04S STTH3R04U 4 Revision history Table 11. Document revision history Date 30-May-2008 Marking Package STTH3R04 DO-201AD STTH3R04 DO-201AD STTH3R04Q DO-15 STTH3R04Q DO-15 R4S SMC 3R4U SMB Revision 1 First issue Ordering information ...

Page 10

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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