STPS130U STMicroelectronics, STPS130U Datasheet - Page 2

• Manufacturer Part Number: STPS130U
• Description: DIODE SCHOTTKY 1A 30V SMB
• Manufacturer: STMicroelectronics

Specifications of STPS130U

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

STPS130
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test:
To evaluate the conduction losses use the following equation: P = 0.37 x I
Figure 1: Average forward power dissipation
versus average forward current
Figure
derating versus pulse duration
2/7
0.6
0.5
0.4
0.3
0.2
0.0
0.001
0.1
Symbol
Symbol
0.01
0.1
R
0.0
V
1
0.01
P
I
th(j-l)
R
F
F(AV)
P
P
ARM
**
*
ARM p
(W)
(1µs)
(t )
3:
0.2
Junction to lead
Reverse leakage current
Forward voltage drop
0.1
* tp = 380 µs,
** tp = 5 ms,
δ = 0.05
Normalized
0.4
Parameter
δ = 0.1
1
δ
δ
I
t (µs)
F(AV)
< 2%
p
< 2%
0.6
δ = 0.2
(A)
avalanche
10
0.8
δ = 0.5
T
T
T
T
T
T
100
δ
Parameter
j
j
j
j
j
j
=tp/T
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
1.0
δ = 1
Tests conditions
T
power
tp
1000
1.2
V
I
I
F
F
R
= 1A
= 2A
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
Figure
derating versus junction temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= V
F(AV)
1.2
0.8
0.6
0.4
0.2
1
0
I
0
25
F(AV)
P
RRM
ARM
P
+ 0.090 I
δ
ARM p
=tp/T
(A)
SMA
SMB
(25°C)
(t )
4:
25
T
50
F
Min.
tp
2
Normalized
(RMS)
50
75
0.37
0.45
Typ
1.5
T
amb
T (°C)
j
75
(°C)
Value
R
th(j-a)
30
23
Max.
0.55
0.46
0.63
0.55
=100°C/W
100
avalanche
10
10
100
R
125
th(j-a)
125
°C/W
=R
Unit
Unit
mA
µA
th(j-I)
V
power
150
150