BYC5-600,127 NXP Semiconductors, BYC5-600,127 Datasheet - Page 3

• Manufacturer Part Number: BYC5-600,127
• Description: DIODE RECT UFAST 600V TO-220AC
• Manufacturer: NXP Semiconductors

Specifications of BYC5-600,127

• Package / Case: TO-220AC-2
• Voltage - Forward (vf) (max) @ If: 2.9V @ 5A
• Voltage - Dc Reverse (vr) (max): 500V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.9 V
• Recovery Time: 50 ns
• Forward Continuous Current: 5 A
• Max Surge Current: 44 A
• Reverse Current Ir: 100 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-3429-5; 934054749127; BYC5-600

Philips Semiconductors
March 2001
Rectifier diode
ultrafast, low switching loss
diode, as a function of rate of change of current dI
reverse recovery of diode, as a function of of change
Fig.3. Maximum forward dissipation as a function of
15
10
Fig.4. Typical reverse recovery switching losses in
5
4
3
2
1
0
Fig.5. Typical switching losses in transistor due to
0.15
0.05
5
0
100
0.2
0.1
0
Forward dissipation, PF (W)
Transistor losses due to diode reverse recovery, Ptsw (W)
0
VR = 400 V
Rs = 0.09 Ohms
100
Vo = 1.3 V
average forward current; rectangular current
Tj = 125 C
f = 20 kHz
BYC5-600
Diode reverse recovery switching losses, Pdsw (W)
VR = 400 V
IF = 5 A
Tj = 125 C
f = 20 kHz
BYC5-600
7.5 A
1
waveform where I
Rate of change of current, dIF/dt (A/us)
Rate of change of current, dIF/dt (A/us)
10 A
Average forward current, IF(AV) (A)
2
0.1
of current dI
10 A
3
0.2
IF = 5 A
7.5 A
4
BYC5-600
F(AV)
I
F
5
=I
/dt.
0.5
F(RMS)
t
p
T
6
D = 1.0
x D.
Tmb(max) C
D =
7
t
T
p
t
8
1000
1000
112.5
125
137.5
150
F
/dt.
3
Fig.8. Typical peak reverse recovery current, I
Fig.7. Typical reverse recovery time t
Fig.6. Origin of switching losses in transistor due to
100
100
10
10
1
100
100
function of rate of change of current dI
Reverse recovery time, trr (ns)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
Tj = 125 C
VR = 400 V
of rate of change of current dI
VD
ID
Rate of change of current, dIF/dt (A/us)
Rate of change of current, dIF/dt (A/us)
dIF/dt
diode reverse recovery.
IF = 5 A
10 A
10 A
IF = 5 A
Irrm
losses due to
diode reverse recovery
time
ID = IL
7.5 A
Product specification
rr
, as a function
BYC5-600
F
/dt.
BYC5-600
BYC5-600
F
Rev 1.400
/dt.
rrm
1000
1000
as a