BYR29-600,127 NXP Semiconductors, BYR29-600,127 Datasheet - Page 3

• Manufacturer Part Number: BYR29-600,127
• Description: DIODE RECT 600V 8A SOD59
• Manufacturer: NXP Semiconductors

Specifications of BYR29-600,127

• Package / Case: TO-220AC-2
• Voltage - Forward (vf) (max) @ If: 1.5V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.95 V at 20 A
• Recovery Time: 75 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 66 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933722320127; BYR29-600; BYR29-600

Philips Semiconductors
September 1998
Rectifier diodes
ultrafast
1000
100
10
Fig.6. Maximum I
1
0.01
Fig.5. Maximum t
0.1
1
10
1
trr / ns
Tj = 25 C
Tj = 100 C
1
Irrm / A
rrm
dIF/dt (A/us)
rr
-dIF/dt (A/us)
at T
at T
10
10
IF=10A
j
j
IF=1A
= 25˚C and 100˚C.
1A
= 25˚C and 100˚C.
Tj = 25 C
Tj = 100 C
IF=10 A
100
100
3
Fig.7. Typical and maximum forward characteristic
Fig.9. Transient thermal impedance Z
0.001
30
25
20
15
10
0.01
5
0
1000
0.1
100
0
10
IF / A
10
Tj = 25 C
Tj = 150 C
1
1us
1.0
Transient thermal impedance, Zth j-mb (K/W)
Qs / nC
Fig.8. Maximum Q
0.5
10us
I
F
= f(V
100us
1
pulse width, tp (s)
F
); parameter T
-dIF/dt (A/us)
1ms
VF / V
typ
BYR29
1.5
10
P
D
IF = 10A
10ms 100ms
s
at T
t
p
Product specification
2 A
T
2
BYR29 series
max
j
= 25˚C
j
D =
BYV29
2.5
T
t
p
t
1s
th
= f(t
Rev 1.300
100
10s
3
p
)